Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors

Current-voltage characteristics of Schottky-type Ag/Porous Silicon (Ag/PS) structures in normal air, humid ambient and in different hydrogen-containing solutions (distilled water, freshwater, Black sea-water, ethanol ad methanol) have been investigated. Generation of the opencircuit voltage (Voc), short-circuit current (Jsc) up to 560 mV and 0.5mA/cm2, respectively, on placing Ag/PS structures in hydrogen-containing solutions was discovered. This phenomenon is reversible, i.e. placing and removal of Ag/PS structures cell from hydrogen-containing solutions is accompanied by response and recovery of the Voc and Jsc parameters. It is shown that the thermal annealing of the Ag/PS structure at 200oC for 10 min is accompanied by somewhat changes and stabilization of Voc and Jsc parameters of Ag/PS sensors. The possible mechanisms related with hydrogen-stimulated generation of voltage and diffusion-stimulated stabilization of the sensing parameters of Ag/PS Schottky-type structures is suggested. Data received in this work indicate on perspectivity of using Ag/PS structures as both the gas sensors and hydrogen cells.

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Metal/Porous Silicon Schottky Diode Structures as Sensors

MRS Proceedings ◽

10.1557/proc-0915-r06-13 ◽

2006 ◽

Vol 915 ◽

Author(s):

Tayyar Dzhafarov ◽

Cigdem Oruc Lus ◽

Sureyya AYDIN ◽

Emel Cingi

Keyword(s):

Porous Silicon ◽

Schottky Diode ◽

Open Circuit Voltage ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Current Voltage ◽

Schottky Type ◽

Capacitance Characteristics

AbstractIn this work we present data on investigation of the current-voltage and capacitance characteristics of Au/PS Schottky type structures in the presence of different hydrogen-containing solutions (glucose, ethanol, methanol, boric acid, sodium tetraborate pentahydrate, sodium borohydride, benzine, KOH). Generation of the open-circuit voltage and short-circuit current density and capacitance up to 0.55 V, 25 mA/cm2 and 1μF respectively on placing of Au/PS structures in these solutions was discovered. This effect is mainly caused by hydrogen component of solutions. The possible mechanism generation of voltage and capacitance in metal/PS sensors hydrogen-containing solutions is suggested. The advantage of metal/PS Schottky type sensors consists in working without applying external electricity.

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Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения

Физика и техника полупроводников ◽

10.21883/ftp.2020.03.49034.9298 ◽

2020 ◽

Vol 54 (3) ◽

pp. 285

Author(s):

В.С. Калиновский ◽

Е.В. Контрош ◽

Г.В. Климко ◽

С.В. Иванов ◽

В.С. Юферев ◽

...

Keyword(s):

Current Density ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Tunnel Diode ◽

Tunnel Diodes ◽

Tunnel Current ◽

Type Layer ◽

Current Voltage ◽

Current Voltage Characteristics

Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

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The Influence of the Magnetic Field on the Current-Voltage Characteristics of CuPc Nanowires

Materials Science Forum ◽

10.4028/www.scientific.net/msf.970.75 ◽

2019 ◽

Vol 970 ◽

pp. 75-81

Author(s):

Alexey Zavgorodniy ◽

Aitbek Aimukhanov ◽

Assylbek Zeinidenov ◽

Galina Vavilova

Keyword(s):

Magnetic Field ◽

Carrier Transport ◽

Copper Phthalocyanine ◽

Short Circuit ◽

Short Circuit Current ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Photosensitive Cell ◽

Positively Charged

The role of spin states in the process of charge carrier transport in copper phthalocyanine (CuPc) nanowires has been established. According to the data obtained, CuPc nanowires are in the η-phase. The current-voltage characteristics (IVC) of a photosensitive cell based on CuPc nanowires in a magnetic field are investigated. As a result of experiments, it was found that applying an external magnetic field, the spins of two positively charged polarons are oriented in one direction. The channel of formation of the bipolaron is blocked. As a result, a decrease in the short-circuit current of the photosensitive cell is observed by more than 61%.

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Противодействующий фотовольтаический эффект в верхней межгенераторной части трехпереходных GaInP/GaAs/Ge солнечных элементов

Физика и техника полупроводников ◽

10.21883/ftp.2019.11.48457.9190 ◽

2019 ◽

Vol 53 (11) ◽

pp. 1568

Author(s):

М.А. Минтаиров ◽

В.В. Евстропов ◽

С.А. Минтаиров ◽

М.З. Шварц ◽

Н.А. Калюжный

Keyword(s):

Electric Power ◽

Open Circuit Voltage ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Undesirable Effect ◽

Current Dependence ◽

Power Generators ◽

Current Voltage ◽

Current Voltage Characteristics

AbstractThe “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the V _ oc – J _ sc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p ^+– n ^+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p – n junctions. In this case, the V _ oc – J _ sc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.

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Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

IOP Conference Series Earth and Environmental Science ◽

10.1088/1755-1315/877/1/012001 ◽

2021 ◽

Vol 877 (1) ◽

pp. 012001

Author(s):

Marwah S Mahmood ◽

N K Hassan

Keyword(s):

Solar Cell ◽

Conversion Efficiency ◽

Current Density ◽

Short Circuit ◽

Perovskite Solar Cells ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Current Voltage ◽

Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

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Further Observations on the Physiology of Salinity Adaptation in the Crab-Eating Frog (Rana Cancrivora)

Journal of Experimental Biology ◽

10.1242/jeb.49.1.185 ◽

1968 ◽

Vol 49 (1) ◽

pp. 185-193

Author(s):

MALCOLM S. GORDON ◽

VANCE A. TUCKER

Keyword(s):

Sea Water ◽

Short Circuit ◽

Electrical Potential ◽

Short Circuit Current ◽

Ringer Solution ◽

Osmotic Concentration ◽

Green Toad ◽

The Face ◽

Solution Bathing ◽

Toad Bufo

1. Total rates of urea loss from adult euryhaline crab-eating frogs (Rana cancrivora) adapted to various environmental salinities between fresh water and 80 % sea water increase as salinity increases above 40% sea water. Oxygen consumption is constant in rate in all salinities studied. 2. The presence of urea in the Ringer solution bathing isolated pieces of skin of frogs adapted to 60% sea water increases both the electrical potential and the inwardly directed short-circuit current across the skin. 3. In skeletal muscle cells addition of intracellular solutes maintains tissue hydration in the face of large increases in plasma osmotic concentration in high-salinity media. Changes in the intracellular urea and free amino acid concentrations are primarily responsible for increases in intracellular osmotic concentration. 4. Some implications of these observations are discussed and comparisons made with the euryhaline green toad, Bufo viridis.

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High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.1339 ◽

2006 ◽

Vol 527-529 ◽

pp. 1339-1342 ◽

Cited By ~ 5

Author(s):

Michael E. Levinshtein ◽

Pavel A. Ivanov ◽

Mykola S. Boltovets ◽

Valentyn A. Krivutsa ◽

John W. Palmour ◽

...

Keyword(s):

Deep Level ◽

Reverse Current ◽

Differential Resistance ◽

Base Resistance ◽

Small Current ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Increasing Temperature ◽

Surface Leakage ◽

And Diffusion

Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range Т = 300 – 773 К. Analysis of the forward current-voltage characteristics and reverse current recovery waveforms shows that the lifetimeτ of non-equilibrium carriers in the base of the diodes steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd. As a result, Rd is virtually temperature independent. An appreciable modulation of the base resistance takes place at room temperature even at a relatively small current density j of 20 A/cm2. At T = 800 K and j = 20 A/cm2, a very deep level of the base modulation has been observed. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2×10-6 А at T = 773 K and a reverse bias of 300 V.

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Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching

Semiconductors ◽

10.1134/1.1187297 ◽

1997 ◽

Vol 31 (12) ◽

pp. 1221-1224 ◽

Cited By ~ 1

Author(s):

T. Ya. Gorbach ◽

S. V. Svechnikov ◽

P. S. Smertenko ◽

P. G. Tul’chinskii ◽

A. V. Bondarenko ◽

...

Keyword(s):

Porous Silicon ◽

Chemical Etching ◽

Current Voltage ◽

Current Voltage Characteristics

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Influence of Silicon Texturization on the Photovoltaic Properties of CuPc/n-Si Hybrid Solar Cells

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.531-532.40 ◽

2012 ◽

Vol 531-532 ◽

pp. 40-44

Author(s):

Zhi Feng Liu ◽

Yi Ting Liu

Keyword(s):

Solar Cell ◽

Current Density ◽

Copper Phthalocyanine ◽

Short Circuit ◽

Short Circuit Current ◽

Energy Conversion Efficiency ◽

Short Circuit Current Density ◽

Hybrid Solar Cell ◽

Photovoltaic Properties ◽

Current Voltage

Hybrid solar cell based on copper-phthalocyanine (CuPc) and textured Si has been fabricated. Influence of silicon texturization on the photovoltaic properties of CuPc/n-Si hybrid solar cell was studied by current-voltage characteristic curves in the dark and under illumination conditions. As a result, it is found that textured Si can improve significantly the performance of hybrid solar cell. It exhibits a three times increase in the short-circuit current density with respect to that of the standard hybrid solar cell, and the short-circuit current density reaches up to 5.4 mA/cm2. In addition, the open-voltage and fill factor are almost constant. The solar-energy conversion efficiency is increased by about three times by the textured Si and achieved about 0.8% under “one Sun” illumination. Furthermore, the possible reasons for this result have been discussed.

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