Studying Light Soaking of Solar Cells by the Use of Solar Simulator

2011 ◽  
Vol 178-179 ◽  
pp. 435-440
Author(s):  
Tine Uberg Naerland ◽  
Birger Retterstøl Olaisen ◽  
Lars Arnberg
Keyword(s):  
Solar Cells ◽  
Defect Formation ◽  
Minority Carrier Lifetime ◽  
Solar Simulator ◽  
Boron Doped ◽  
Degradation Properties ◽  
The Impact ◽  
Intensity Instability ◽  
High Intensity Light ◽  
Irradiance Spectrum

A review of light soaking of solar cells by the use of commercial IV-characterization instruments is presented. The paper addresses the challenges of studying light induced degradation (LID) using a high intensity light source. Issues related to heating of the cell, temporal intensity instability and the impact of the irradiance spectrum are discussed. The main focus of the paper is devoted to the degradation of boron-doped Czochralski silicon (Cz-Si) where boron-oxygen related complexes are responsible for a metastable defect formation. Some advantages and limitations concerning the use of IV characteristics to reveal the degradation properties of boron-doped Cz-Si compared to applying minority carrier lifetime techniques are also presented.

Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 1-8 ◽  
Author(s):  
Nathan Stoddard ◽  
Bei Wu ◽  
Ian Witting ◽  
Magnus C. Wagener ◽  
Yongkook Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystal Growth ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Single Crystal Silicon ◽  
Minority Carrier Lifetime ◽  
Crystal Silicon ◽  
Growth Method ◽  
Screen Print ◽  
The Impact

A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm2 size have been produced ranging up to 17% in efficiency using industrial screen print processes.

Atomic Structure of Light-Induced Efficiency-Degrading Defect in Boron-doped Czochralski Silicon Solar Cells

2021 ◽  
Author(s):  
Abigail Rose Meyer ◽  
Craig P Taylor ◽  
Michael Venuti ◽  
Serena Eley ◽  
Vincenzo LaSalvia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Structure ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Light Exposure ◽  
Minority Carrier Lifetime ◽  
Silicon Solar Cells ◽  
Czochralski Silicon ◽  
Boron Doped

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime in boron-doped Cz Si decreases upon light exposure due to...

scholarly journals Ionizing Radiations (Alpha, Beta, Gamma) Effects on CdS / P-Si Heterojunction Solar Cell for Electrical and Optical Properties

2017 ◽  
Vol 7 (1) ◽  
pp. 20 ◽  
Author(s):  
Ayman A. El-Amin ◽  
Magdi H. Saad
Keyword(s):  
Solar Cells ◽  
Gamma Radiation ◽  
Gamma Irradiation ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Critical Role ◽  
Minority Carrier Lifetime ◽  
Alpha Beta ◽  
Ionizing Radiations ◽  
The Impact

The effect of ionizing radiations (Alpha, Beta, Gamma) in CdS/p-Si heterojunction solar cells are discussed in this paper. The short-circuit current density parameters before Gamma irradiation conditions have been improved up to 35 mA/cm2 and after Gamma irradiation was 30 mA/cm2. The open circuit voltage before Gamma irradiation was 0.59 and 0.565 V after Gamma irradiation. The limitations of these devices were discussed by investigating the dependence of electrical and efficiency parameters in function of radiation time. The efficiency of the cell before radiation was equal to (11.2%) whenever, after the impact of both Alpha, Beta, and Gamma was follows, 4.7, 4.9, and 5.1% respectively. The fill factor before and after Gamma irradiation was 54.5 and 53 %. Studying and analyzing the cells using the I-V, with the change of time rate of Gamma radiation played a critical role in reducing the efficiency of solar cells. The campaign was carried out with different doses of a series of solar cells by exposing them to different time. The deterioration parameters of CdS/p-Si solar cells by Gamma radiation led to strongly supports the results of minority carrier lifetime, which clearly showed diminishing minority carrier lifetime with increasing radiation dose.

scholarly journals Исследование концентраторных фотоэлектрических модулей с каскадными солнечными элементами

2021 ◽  
Vol 91 (9) ◽  
pp. 1419
Author(s):  
Е.А. Ионова ◽  
Н.Ю. Давидюк ◽  
Н.А. Садчиков ◽  
А.В. Андреева
Keyword(s):  
Computer Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Triple Junction ◽  
Fresnel Lens ◽  
Internal Resistance ◽  
Solar Simulator ◽  
Junction Solar Cell ◽  
The Impact ◽  
Radiation Conversion

To study concentrator photovoltaic modules with GaInP/GaInAs/Ge triple-junction solar cells we used the measurement capabilities of a solar simulator accompanied by a computer simulation. The comparison of values of parameters for a module, Fresnel lens and triple-junction solar cell, obtained both experimentally and computed by means of the computer simulation, demonstrated good matching of results and high precision of calculations using the software. This allows to use both methods simultaneously to explain processes of radiation conversion in the system concentrator–solar cell and predict the values of module parameters under various external focusing conditions. The utilization of both methods revealed the impact of lateral currents on the total photo current of solar cells inside a module. For the system Fresnel lens–multi-junction solar cell we determined the possible cases of power loses associated with internal resistance of the cells. Output parameters of the module under varying spectrum of incoming radiation has been calculated using software.

scholarly journals Unraveling the Impact of Halide Mixing on Crystallization and Phase Evolution in CsPbX3 Perovskite Solar Cells

Matter ◽  
2020 ◽  
Author(s):  
Junjie Ma ◽  
Minchao Qin ◽  
Yuhao Li ◽  
Xiao Wu ◽  
Zhaotong Qin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Phase Evolution ◽  
The Impact

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells
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