Indirect Ultra-Pure Water Metals Analysis by Extended Ion Exchange on a Silica Surface

2012 ◽  
Vol 187 ◽  
pp. 275-278 ◽  
Author(s):  
Larry W. Shive ◽  
Hai He Liang ◽  
Alexis Grabbe ◽  
Sasha Kweskin
Keyword(s):  
Silica Surface ◽  
Semiconductor Industry ◽  
Pure Water ◽  
Device Performance ◽  
Root Cause ◽  
Ultra Pure Water ◽  
Ultra High Purity ◽  
Icp Ms ◽  
Concentration Step ◽  
Water Purity

Water purity is not taken for granted in the Semiconductor Industry. Ultra high purity water (UPW) is analyzed continuously in-line for particles and resistivity. Routine samples are automatically taken for total organic carbon (TOC), boron, silica and dissolved oxygen. Less routine analyses, such as metals, are done off-line. Metal content of UPW water is well below the detection limits of ICP-MS even with a pre-concentration step. As a result, metals content may vary in the water without being detected. These variations may affect device performance and yield while the root cause may go undetected.

Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use

2014 ◽  
Vol 219 ◽  
pp. 134-137
Author(s):  
Jacques C.J. van der Donck ◽  
Jurrian Bakker ◽  
Jeroen A. Smeltink ◽  
Robin B.J. Kolderweij ◽  
Ben C.M.B. van der Zon ◽  
...  
Keyword(s):  
Physical Chemistry ◽  
Energy Consumption ◽  
Water Use ◽  
Semiconductor Industry ◽  
Pure Water ◽  
High Volume ◽  
Mechanical Action ◽  
Feature Size ◽  
Ultra Pure Water ◽  
Wafer Cleaning

Reduction of water and energy consumption is of importance for keeping viable industry in Europe. In 2012 the Eniac project Silver was started in order to reduce water and energy consumption in the semiconductor industry by 10% [1]. Cleaning of wafers is one of the key process steps that require a high volume of Ultra-Pure Water (UPW). For the production of a single wafer more than 120 cleaning steps may be required [2]. Furthermore, the reduction of the feature size makes devices more vulnerable to damage by mechanical action. This trend gives rise to the need for new, gentler cleaning processes.

Monitoring the Quality of Ultra-Pure Water in the Semiconductor Industry by Online Ion Chromatography

2005 ◽  
Vol 154 (1-2) ◽  
pp. 15-20 ◽  
Author(s):  
Thomas Ehmann ◽  
Claus Mantler ◽  
Detlef Jensen ◽  
Ralf Neufang
Keyword(s):  
Ion Chromatography ◽  
Semiconductor Industry ◽  
Pure Water ◽  
Ultra Pure Water

Relationship between water qualities and treatments in the ultra pure water production system

1994 ◽  
Vol 30 (10) ◽  
pp. 237-241 ◽  
Author(s):  
S. Okouchi ◽  
K. Yamanaka ◽  
Y. Ishihara ◽  
T. Yanaka ◽  
H. Uedaira
Keyword(s):  
Relaxation Time ◽  
Production System ◽  
Tap Water ◽  
Pure Water ◽  
Spin Lattice Relaxation ◽  
Dielectric Parameter ◽  
Water Molecules ◽  
Dielectric Relaxation Time ◽  
Ultra Pure Water ◽  
Water Purity

In an ultra pure water (UPW) production system which can satisfy the water qualities for 4 megabit DRAM, the changes in water qualities from a tap water (58.4 mg/dm3 as CaCO3 hardness) as a raw water to UPW were followed from the view of the micro-structure and microdynamic behavior of water molecules with increasing of the water purity by a complex permittivity and 17O-NMR measurements, as well as measurements of resistivity, density, and so on. The dielectric relaxation time and spin-lattice relaxation time of 17O nuclei related to the microdynamic behavior of water molecules indicated a trace change between the tap water and UPW. However, the dielectric parameter α which characterizes a symmetric distribution of relaxation times was gradually lowered with increasing of the water purity. The relationship between the half-width of 17O magnetic resonance and pH gave the rate constants for the prototropic charge migration in water. The difference of α and density between the tap water and UPW became a measure of water purity.

Routine analysis of ultra pure water by ICP-MS in the low- and sub-ng/L level

2000 ◽  
Vol 366 (1) ◽  
pp. 64-69 ◽  
Author(s):  
R. Hoelzl ◽  
L. Fabry ◽  
L. Kotz ◽  
S. Pahlke
Keyword(s):  
Pure Water ◽  
Routine Analysis ◽  
Ultra Pure Water ◽  
Icp Ms

Production System Improvement by Integration of FMEA with 5-Whys Analysis

2013 ◽  
Vol 748 ◽  
pp. 1203-1207 ◽  
Author(s):  
Siew Hong Ding ◽  
Nur Amalina Muhammad ◽  
Nur Hanisah Zulkurnaini ◽  
Amanina Nadia Khaider ◽  
Shahru Kamaruddin
Keyword(s):  
Failure Mode ◽  
Rapid Growth ◽  
Production System ◽  
Lower Cost ◽  
Semiconductor Industry ◽  
Drilling Machine ◽  
Effect Analysis ◽  
Marketing Environment ◽  
Root Cause ◽  
System Improvement

With the rapid growth of semiconductor industry, manufacturers are always seeking for improvement to produce better product quality with lower cost in order to survive under competitive marketing environment. However, these matters are easily affected by the failures occurred on the machines. Thus, this paper proposes framework using failure mode and effect analysis (FMEA) with 5-Whys analysis to discover the root cause of the failure furthermore to identify the effective solutions. Drilling machine has been used to justify the practicability of the proposed framework.

scholarly journals Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

2017 ◽  
Vol 23 (5) ◽  
pp. 916-925
Author(s):  
Pritesh Parikh ◽  
Corey Senowitz ◽  
Don Lyons ◽  
Isabelle Martin ◽  
Ty J. Prosa ◽  
...  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Atom Probe ◽  
Physical Structure ◽  
Oxide Semiconductor ◽  
Device Performance

AbstractThe semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

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