LTCC Breakdown Voltage Investigation

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000047-000052 ◽  
Author(s):  
Mateusz Dorczynski ◽  
Wiktoria Fabinska ◽  
Henryk Roguszczak ◽  
Leszek Golonka
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Resistance Measurement ◽  
Electrical Field ◽  
Current Dependence ◽  
Ceramic Tape ◽  
Current Characteristics

Abstract High voltage properties of the LTCC (Low Temperature Co-Fired Ceramics) cofired ceramic tape are presented. Chauvin Arnoux C.A. 6555 insulation tester is used to measure the leakage current and the resistance. Measurement is possible up to 15 kV. The DuPont 951 test structures are manufactured. The electrodes are fabricated of Ag (DP 6142) and PdAg (DP 6146) pastes. The leakage current dependence upon the temperature up to 320°C is measured. The ceramics properties depend on the temperature, especially beyond 200°C. Moreover, the current characteristics as a function of electrical field are presented and the breakdown voltage is determined.

A New Slope SOI-LDMOS High-Voltage Power Device

2012 ◽  
Vol 236-237 ◽  
pp. 797-800
Author(s):  
Xiao Ming Yang ◽  
Yu Cai ◽  
Tian Qian Li
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Power Device ◽  
Drift Region ◽  
Electrical Field ◽  
New Device ◽  
Buried Oxide ◽  
Drain Electrode ◽  
Surface Electric Field

A slope SOI-LDMOS power device is proposed for high-voltage. When a positive bais is applied to the drain electrode, holes are induced and astricted by the slope buried oxide layer. So a high density positive charge layer is formed on the buried oxide layer. The electrical field in the buried oxide is improved as well as vertical breakdown voltage by the layer. Because the thickness of the drift region linearly increases from the source to the drain, the surface electric field is optimized, resulting in increase of lateral breakdown voltage. In this paper, the electric characteristics of the new device are simulated by Medici softerware. The result is shown that above 600 V breakdown voltage is obtained at 1μm thick buried oxide layer. The breakdown voltage is higher by three times than that of conventional SOI LDMOS.

Energy Storage and Leakage Current Characteristics of Low-Temperature-Derived Pb0.8La0.1Ca0.1Ti0.975O3 Thin Films Tailored by an Annealing Atmosphere

2021 ◽  
Vol 125 (5) ◽  
pp. 2831-2840
Author(s):  
Hanfei Zhu ◽  
Guoqiang Feng ◽  
Xiaolong Chen ◽  
Xiao Lang ◽  
Huali Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Low Temperature ◽  
Leakage Current ◽  
Annealing Atmosphere ◽  
Current Characteristics

Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes

2008 ◽  
Author(s):  
P. A. Folkes ◽  
J. Little ◽  
S. Svensson ◽  
K. Olver
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Current Characteristics ◽  
Low Temperature Photoluminescence

Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes

2019 ◽  
Vol 963 ◽  
pp. 549-552
Author(s):  
Oleg Rusch ◽  
Jonathan Moult ◽  
Tobias Erlbacher
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Voltage Drop ◽  
Electrical Characteristics ◽  
Electrical Field ◽  
Forward Voltage ◽  
Voltage Drops ◽  
Forward Voltage Drop ◽  
Trench Structure

This work presents a design study of customized p+ arrays having influence on the electrical properties of manufactured 4H-SiC Junction Barrier Schottky (JBS) diodes with designated electrical characteristics of 5 A forward and 650 V blocking capabilities. The effect of the Schottky area consuming p+ grid on the forward voltage drop, the leakage current and therefore the breakdown voltage was investigated. A recessed p+ implantation, realized through trench etching before implanting the bottom of the trenches, results in a more effective shielding of the electrical field at the Schottky interface and therefore reduces the leakage current. Customizing the p+ grid array in combination with the trench structure, various JBS diode variants with active areas of 1.69 mm2 were fabricated whereas forward voltage drops of 1.58 V @ 5 A with blocking capabilities up to 1 kV were achieved.

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 656-659 ◽  
Author(s):  
Andreas Hürner ◽  
Luigi di Benedetto ◽  
Tobias Erlbacher ◽  
Heinz Mitlehner ◽  
Anton J. Bauer ◽  
...  
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Internal Ring ◽  
Electrical Field ◽  
Power Semiconductor ◽  
Double Ring ◽  
Power Semiconductor Devices ◽  
Ring Junction ◽  
Acceptable Deviation

In this study, a new robust double-ring junction-termination-extension (DR-JTE) for high-voltage pn-diodes is presented and analyzed using numerical simulations. As figured out, the DR-JTE reduces the electrical field at both, the edge of the single-JTE region and the MESA-transition, respectively. Thereby, due to the reduction of the electrical field, the maximum breakdown voltage is increased to 91.5% of the theoretical, parallel-plane breakdown voltage of 6.5kVand the maximum acceptable deviation of the optimum implantations dose is twice than that of the single-JTE structure. Furthermore, due to the internal ring, the MESA-transition is shielded from the electrical field and therefore the breakdown voltage is much less affected by the angle of the MESA.

Low Temperature Synthesis of Pb(Zr0.52Ti0.48)O3 Ceramic Powders by Chelating Agent Assisted Sol-Gel Process

2012 ◽  
Vol 488-489 ◽  
pp. 310-314 ◽  
Author(s):  
P. Jegatheesan ◽  
M. Muneeswaran ◽  
Raj S. Gokul ◽  
N.V. Giridharan
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Sol Gel ◽  
Broad Band ◽  
Vibrational Analysis ◽  
Chelating Agent ◽  
Phase Evolution ◽  
Xrd Analysis ◽  
Ceramic Powders ◽  
Current Characteristics

The Perovskite Pb(Zr0.52Ti0.48)O3(PZT) ceramic powders were synthesized by sol-gel assisted process by using citric acid (CA), EDTA and Triethanolamine (TEA) as chelating agents. The phase evolution of the synthesized powders was investigated by powder X-ray diffraction (XRD) analysis. TEA assisted process yielded phase pure PZT powders at a relatively low temperature of 600 °C compared to CA and EDTA assisted process. Further, the phase purity of the powders were improved by sintering temperature of 800°C. Vibrational analysis of Metal-Oxygen bonding was carried out using Fourier transform infrared spectroscopic (FTIR) analysis. Showed a broad band in the spectrums between 500 cm-1to 700 cm-1attributed to the vibrations (Ti/Zr)O6and Ti/Zr-O from PbZrTiO3. The morphology of the prepared powders was visualized using Scanning electron microscope. From the leakage current characteristics, EDTA assisted powder has higher leakage current densities compared to the CA and TEA assisted powders.

Study of Leakage Current Characteristics of High Voltage Insulators Ageing After Dry Season in Polluted Environmental Conditions

2021 ◽  
Author(s):  
Salama Manjang ◽  
Syafaruddin ◽  
Tambi ◽  
Mustarum Musaruddin ◽  
Ikhlas Kitta
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Environmental Conditions ◽  
Dry Season ◽  
Current Characteristics

Development of High Permeability Core Materials for Embeddable Inductors in Flexible Organic Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
C. K. Liu ◽  
P. L. Cheng ◽  
S. Y. Y. Leung ◽  
T. W. Law ◽  
D. C. C. Lam
Keyword(s):  
Low Temperature ◽  
Sol Gel ◽  
Circuit Board ◽  
Organic Substrates ◽  
Circuit Boards ◽  
High Permeability ◽  
Electrical Measurements ◽  
Different Temperatures ◽  
Spiral Inductors ◽  
Ceramic Tape

AbstractCapacitors, resistors and inductors are surface mounted components on circuit boards, which occupy up to 70% of the circuit board area. For selected applications, these passives are packaged inside green ceramic tape substrates and sintered at temperatures over 700°C in a co-fired process. These high temperature processes are incompatible with organic substrates, and low temperature processes are needed if passives are to be embedded into organic substrates. A new high permeability dual-phase Nickel Zinc Ferrite (DP NZF) core fabricated using a low temperature sol-gel route was developed for use in embedded inductors in organic substrates. Crystalline NZF powder was added to the sol-gel precursor of NZF. The solution was deposited onto the substrates as thin films and heat-treated at different temperatures. The changes in the microstructures were characterized using XRD and SEM. Results showed that addition of NZF powder induced low temperature transformation of the sol-gel NZF phase to high permeability phase at 250°C, which is approximately 350°C lower than transformation temperature for pure NZF sol gel films. Electrical measurements of DP NZF cored two-layered spiral inductors indicated that the inductance increased by three times compared to inductors without the DP NZF cores. From microstructural observations, the increase is correlated with the changes in microstructural connectivity of the powder phase.

Analysis of Alternative Parameters of Dynamic Resistance Measurement in High Voltage Circuit Breakers

2018 ◽  
Author(s):  
H. F. S. Sousa ◽  
A. C. de Oliveira ◽  
H. N. de Santana ◽  
E. G. da Costa ◽  
T. V. Ferreira
Keyword(s):  
High Voltage ◽  
Resistance Measurement ◽  
Dynamic Resistance ◽  
Circuit Breakers
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