Photovoltaic performance of p-Si/Cd1-xZnxO heterojunctions

Heterojunctions of p-Si/Cd1-xZnxO were synthesized by depositing of Cd1-xZnxO films on p-Si substrates by electrochemical deposition. The morphological properties of the films were studied by scanning microscopy. The electric and photoelectrical properties of heterojunctions were investigated depending on the deposition potential and films composition. Heterojunctions of p-Si/Cd1-xZnxO, which deposited at cathode potential of -1.2 V, shows good rectification (k=1640). Under AM1.5 conditions the maximal values of open-circuit voltage, short-circuit current, fill factor and efficiency of our best nano-structured cell, were Uoc = 442 mV, Jsc = 19.9 mA/cm2, FF = 0.59 and n = 5.1 %, respectively. Full Text: PDF ReferencesX. Li, et al. "Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films", J. Appl. Phys., 105, 103914 (2009). CrossRef X. Han, K. Han and M. Tao, "Electrodeposition of Group-IIIA Doped ZnO as a Transparent Conductive Oxide", ECS Trans., 25, 93 (2010). CrossRef W. Liu et al. "Na-Doped p-Type ZnO Microwires", J. Am. Chem. Soc., 132, 2498 (2010). CrossRef R.A. Ismail and O.A. Abdulrazaq, "A new route for fabricating CdO/c-Si heterojunction solar cells", Sol. Energy Mater. Sol. Cells, 91, 903 (2007). CrossRef R.S. Mane, H.M. Pathan, C.D. Lokhande and S.H.Han, "An effective use of nanocrystalline CdO thin films in dye-sensitized solar cells", Sol. Energy, 80 185 (2006). CrossRef E. Martin et al. "Properties of multilayer transparent conducting oxide films", Thin Solid Films, 461, 309 (2004). CrossRef Y. Caglar, M. Caglar, S. Ilican and A. Ates, "Morphological, optical and electrical properties of CdZnO films prepared by sol?gel method", J. Phys. D: Appl. Phys., 42, 065421 (2009). CrossRef F. Wang, Z. Ye, D. Ma, L. Zhu and F. Zhuge, "Formation of quasi-aligned ZnCdO nanorods and nanoneedles", J. Cryst. Growth, 283, 373 (2005). CrossRef A. Abdinov, H. Mamedov, S. Amirova, "Investigation of Electrodeposited Glass/SnO2/CuInSe2/Cd1-xZnxS1-ySey/ZnO Thin Solar Cells", Jpn. J. Appl. Phys., 46, 7359 (2007). CrossRef A. Abdinov, H. Mamedov, H. Hasanov, and S. Amirova, "Photosensitivity of p,n-Si/n-Cd1?xZnxS heterojunctions manufactured by a method of electrochemical deposition", Thin Solid Films, 480-481, 388 (2005). CrossRef A. Abdinov, H. Mamedov, and S. Amirova, "Investigation of electrodeposited p-Si/Cd1 ? xZnxS1 ? ySey heterojunction solar cells", Thin Solid Films, 511-512, 140 (2006) CrossRef H. Mamedov, V. Mamedov, V. Mamedova, Kh. Ahmadova, "Investigation of p-GaAs/n-Cd1-xZnxS1-yTey/Cd1-xZnxO heterojunctions deposited by electrochemical deposition", J. Optoelectrom. Adv. M., 17, 67 (2015). DirectLink H. Mamedov et al. "Preparation and Investigation of p-GaAs/n-Cd1-xZnxS1-yTey Heterojunctions Deposited by Electrochemical Deposition", J. Solar Energy Engineering, 136, 044503 (2014). CrossRef S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer and F. Henneberger, "Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy", Appl. Phys. Lett., 89, 201907 (2006). CrossRef G. Torres-Delgado et al. "Percolation Mechanism and Characterization of (CdO)y(ZnO)1?y Thin Films", Adv. Funct. Mater., 12, 129 (2002). CrossRef H. Tabet-Derraz, N. Benramdane, D. Nacer, A. Bouzidi and M. Medles, "Investigations on ZnxCd1?xO thin films obtained by spray pyrolysis", Sol. Energy Mater. Sol. Cells, 73, 249 (2002). CrossRef M. Tortosa, M. Mollar and B. Mar?, "Synthesis of ZnCdO thin films by electrodeposition", J. Cryst. Growth, 304, 97 (2007). CrossRef A. Singh, D. Kumar, P. K. Khanna, M. Kumar, and B. Prasad, "Phase Segregation Limit in ZnCdO Thin Films Deposited by Sol?Gel Method: A Study of Structural, Optical and Electrical Properties", ECS Journal of Solid State Science and Technology, 2 (9), Q136 (2013). CrossRef F.Z. Bedia, A. Bedia, B. Benyoucef and S.Hamzaoui, "Electrical Characterization of n-ZnO/p-Si Heterojunction Prepared by Spray Pyrolysis Technique", Physics Procedia, 55, 61 (2014). CrossRef M. Jing-Jing et al. "Rectifying and Photovoltage Properties of ZnO:A1/p-Si Heterojunction", Chin. Phys. Lett., 27 (10), 107304 (2010). CrossRef

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A Bibliometric Analysis of the Publications on In Doped ZnO to be a Guide for Future Studies

Metals ◽

10.3390/met10050598 ◽

2020 ◽

Vol 10 (5) ◽

pp. 598 ◽

Cited By ~ 2

Author(s):

Mehmet Yilmaz ◽

Maria Luisa Grilli ◽

Guven Turgut

Keyword(s):

Thin Films ◽

Solar Cells ◽

Zno Films ◽

Applied Physics ◽

Thin Solid Films ◽

Future Studies ◽

X Ray ◽

Solid Films ◽

Device Applications ◽

Doped Zno

This study aims to examine the studies regarding In doped ZnO published in the Web of Science database. A total of 777 articles were reached (31 March 2020). The articles were downloaded for the bibliometric analysis and collected in a file. The file was uploaded to VOSViewer programme in order to reveal the most used keywords, words in the abstracts, citation analyses, co-citation and co-authorship and countries analyses of the articles. The results showed that the most used keywords were “ZnO”, “photoluminescence”, “optical properties”, “thin films” and “doping”. These results indicate that the articles mostly focus on some characteristics of In doped ZnO thin films such as structural, optical and electrical features. When the distribution of the number of articles using the keywords by year was searched, it was found that recent articles focus mainly on synthesis of In doped ZnO film via chemical routes such as sol-gel and hydrothermal syntheses, and on ZnO-based device applications such as solar cells and gas sensors. The most used keywords were also found to be films, X-ray, glass substrate, X-ray Diffraction (XRD), spectra and layer. These results indicate that the studies mostly focus on In doped ZnO thin films as transparent conductive oxide (TCO) material used in device applications like solar cells. In this context, it was found that structural, topographical, optical, electrical and magnetic properties of In doped ZnO films were characterized in terms of defected structure or defect type, substrate temperature, film thickness and In doping content. When the distribution of these words is shown on a year-by-year basis, it is evident that more recent articles tend to focus both on efficiency and performance of In doped ZnO films as TCO in solar cells, diodes and photoluminescence applications both on nanostructures, such as nanoparticles, and nanorods for gas sensor applications. The results also indicated that Maldonado and Asomoza were the most cited authors in this field. In addition, Major, Minami and Ozgur were the most cited (co-citation) authors in this field. The most cited journals were found to be Thin Solid Films, Journal of Materials Science Materials in Electronics and Journal of Applied Physics and, more recently, Energy, Ceramics International, Applied Physics-A, Optik, Material Research Express, ACS Applied Materials and Interfaces and Optical Materials. The most co-cited journals were Applied Physics Letters, Thin Solid Films, Journal of Applied Physics, Physical Review B, and Applied Surface Science. Lastly, the countries with the highest number of documents were China, India, South Korea, USA and Japan. Consequently, it is suggested that future research needs to focus more on synthesis and characterization with different growth techniques which make In doped ZnO suitable for device applications, such as solar cells and diodes. In this context, this study may provide valuable information to researchers for future studies on the topic.

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