scholarly journals Passivation of Silicon Oxide Film Deposited at Low Temperature by Annealing in Nitrogen Ambient

2006 ◽  
Vol 19 (4) ◽  
pp. 334-338
Author(s):  
Jun-Sik Kim ◽  
Ho-Kyoon Chung ◽  
Byoung-Deog Choi ◽  
Ki-Yong Lee ◽  
Jun-Sin Yi
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Silicon Oxide ◽  
Silicon Oxide Film

Low Temperature Formation of Silicon Oxide Thin Film and Modification of Film Quality by Argon Excimer Light

2014 ◽  
Vol 894 ◽  
pp. 408-411
Author(s):  
Kensuke Nishioka ◽  
Kosei Sato ◽  
Takuya Ito ◽  
Yasuyuki Ota
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Oxide Film ◽  
Silicon Oxide ◽  
Silicone Oil ◽  
Uv Light ◽  
High Energy ◽  
Oxide Thin Film ◽  
Silicon Oxide Film ◽  
Ft Ir

Silicon oxide thin film was formed using reaction of spin-coated dimethyl-silicone-oil and 5% ozone gas at low temperature of 300°C. Silicone oil is used for lubrication, insulation, and so on, and it is inexpensive and easy to deal with owing to its stability. FT-IR spectrum of the formed silicon oxide film was similar to that of the thermally oxidized film, and we hardly observed peaks of Si-CH3and C-H bonds originated in silicone oil. The Si-OH bonds in the film were observed. The Si-OH bond causes the degradation of the electric properties of the insulator. In order to remove the Si-OH bonds, the silicon oxide film was treated with an argon excimer light at room temperature. The wavelength of the light was 126 nm. The amount of Si-OH bond was drastically reduced by the UV annealing. The energy of the UV light is high and the value is 9.8 eV. The high energy light may cut the bond of Si-OH. Therefore, the amount of Si-OH bond could be reduced.

Adhesion of a thin silicon oxide film on a polycarbonate substrate

1993 ◽  
Vol 64-65 ◽  
pp. 849-856 ◽  
Author(s):  
S. Vallon ◽  
B. Drévillon ◽  
C. Sénémaud ◽  
A. Gheorghiu ◽  
V. Yakovlev
Keyword(s):  
Oxide Film ◽  
Silicon Oxide ◽  
Silicon Oxide Film ◽  
Thin Silicon ◽  
Polycarbonate Substrate

Photoluminescence of a silicon oxide film formed by anodization in the electropolishing region in HF solution

1995 ◽  
Vol 7 (14) ◽  
pp. 2901-2907 ◽  
Author(s):  
Xiangyang Ma ◽  
Lideng Chen ◽  
Zhenguo Ji ◽  
Hongnian Yao ◽  
Duanlin Que
Keyword(s):  
Oxide Film ◽  
Silicon Oxide ◽  
Silicon Oxide Film
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