Characterization of Al-doped ZnO (AZO) Transparent Conductive Thin films Grown by Atomic Layer Deposition

2007 ◽  
Vol 42 (1-6) ◽  
pp. 172-175 ◽  
Author(s):  
K. Saito ◽  
Y. Hiratsuka ◽  
A. Omata ◽  
H. Makino ◽  
S. Kishimoto ◽  
...  

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


2001 ◽  
Vol 65 (1-4) ◽  
pp. 125-132 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Saito ◽  
K. Takahashi ◽  
M. Konagai

2018 ◽  
Vol 39 (3) ◽  
pp. 033004 ◽  
Author(s):  
Li Chen ◽  
Xinliang Chen ◽  
Zhongxin Zhou ◽  
Sheng Guo ◽  
Ying Zhao ◽  
...  

2021 ◽  
Author(s):  
Jorge Rodríguez-López ◽  
RICARDO RANGEL ◽  
Antonio Ramos ◽  
Dainet Berman ◽  
Patricia Quintana-Owen ◽  
...  

2012 ◽  
Vol 30 (2) ◽  
pp. 021202 ◽  
Author(s):  
Tara Dhakal ◽  
Daniel Vanhart ◽  
Rachel Christian ◽  
Abhishek Nandur ◽  
Anju Sharma ◽  
...  

2010 ◽  
Vol 157 (10) ◽  
pp. G193 ◽  
Author(s):  
Aile Tamm ◽  
Marianna Kemell ◽  
Jekaterina Kozlova ◽  
Timo Sajavaara ◽  
Massimo Tallarida ◽  
...  

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