Nd1+XBa2-XCu3O7-δBulk Superconductor by Zone-melt Process

AbstractSilicon with buried oxides formed by ion implantation (SIMOX) or zone-melt recrystallization (ZMR) was exposed to deuterium gas at temperatures from 773 K to 1273 K, and the depth profile of the D was then determined by nuclear-reaction analysis. The D was localized within the buried oxide, with no measurable quantity in the Si phase. Uptake was controlled by permeation through the Si overlayer, and the permeability of D in Si was determined at 873 K. The sample dependence of D uptake indicated substantially fewer defect-trap sites in SIMOX oxide annealed at 1678 K as opposed to 1548 K, with still smaller defect densities in the ZMR oxide. Hydrogen exposure at 1273 K substantially disrupted the SIMOX structures.

Download Full-text

Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

MRS Proceedings ◽

10.1557/proc-188-53 ◽

1990 ◽

Vol 188 ◽

Cited By ~ 4

Author(s):

Ingrid De Wolf ◽

Jan Vanhellemont ◽

Herman E. Maes

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Raman Spectroscopy ◽

Cross Section ◽

Silicon Layer ◽

Silicon On Insulator ◽

Micro Raman Spectroscopy ◽

Transmission Electron ◽

Non Destructive ◽

Zone Melt

ABSTRACTMicro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

Download Full-text

Defect analysis of SOI structures made by CO/sub 2/-laser zone melt recrystallization

10.1109/soi.1988.95421 ◽

2003 ◽

Author(s):

H. Baumgart ◽

M.J.J. Theunissen ◽

M.J.L. Geyselaers ◽

J.M.L. Mulder ◽

W.P.M. Rutten ◽

...

Keyword(s):

Defect Analysis ◽

Zone Melt

Download Full-text

Characterization of Cd1−xMnxTe crystals grown by the Bridgman method and the zone melt method

Journal of Crystal Growth ◽

10.1016/s0022-0248(00)00214-1 ◽

2000 ◽

Vol 214-215 ◽

pp. 885-888 ◽

Cited By ~ 4

Author(s):

H Sato ◽

K Onodera ◽

H Ohba

Keyword(s):

Bridgman Method ◽

Zone Melt

Download Full-text

The Effect of Er2BaCuo5 Additions on the Microstructure and Magnetic Properties of Zone Melt Textured YBa2Cu3O6+x Wires

MRS Proceedings ◽

10.1557/proc-275-207 ◽

1992 ◽

Vol 275 ◽

Author(s):

D. Balkin ◽

C. Varanasi ◽

P. McGinn

Keyword(s):

Magnetic Properties ◽

Microstructural Analysis ◽

Superconducting Phase ◽

Single Element ◽

Zone Melt ◽

Plate Width ◽

Microstructure And Magnetic Properties

ABSTRACTYBa2Cu3O6+x (Y-123) wires with Er2BaCuO5 (Er-211) and Y2BaCuO5 (Y-211) additions were vertically zone melted using a single element resistive furnace. The microstructure and magnetic Jc of wire segments taken from different sections of well textured wires were analyzed and compared. In both Er-211 and Y-211 doped wires the 123 plate width and the magnetic Jc decreased with increasing 211 additions. Microstructural analysis on the Er-211 doped wires confirms that Er-211 dissolves in the melt and results in the formation of a YzEr(1-z)Ba2Cu3O6+x superconducting phase upon solidification which shows improved magnetic properties over Y-211 doped wires.

Download Full-text

Viscoelastic Stress Relief in Patterned Silicon-on-Insulator Structures

MRS Proceedings ◽

10.1557/proc-130-327 ◽

1988 ◽

Vol 130 ◽

Cited By ~ 2

Author(s):

Theodore J. Letavic ◽

Edward W. Maby ◽

Ronald J. Gutmann

Keyword(s):

Mechanical Model ◽

Silicon Film ◽

Stress Relief ◽

Silicon On Insulator ◽

Viscoelastic Flow ◽

Glass Layer ◽

Flow Mechanism ◽

Pattern Size ◽

Phosphosilicate Glass ◽

Zone Melt

AbstractA high-temperature viscoelastic stress relief technique has been investigated as a means for reducing in-plane stress encountered during zone-melt recrystallization of patterned silicon-on-insulator structures. This technique incorporates a phosphosilicate glass layer between the silicon film and the insulating substrate to provide a viscous flow mechanism for stress relief within the composite structure. The stress relaxation can bequalitatively described by a mechanical model which couples thermal expansion and viscoelastic flow. The model predicts the time constant for stress relief at high temperatures as a function of pattern size, and the results are useful as a design aid for zone-melt recrystallization experiments.

Download Full-text