Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

1990 ◽  
Vol 188 ◽  
Author(s):  
Ingrid De Wolf ◽  
Jan Vanhellemont ◽  
Herman E. Maes
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Cross Section ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron ◽  
Non Destructive ◽  
Zone Melt

ABSTRACTMicro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.

scholarly journals Combining Micro-Raman Spectroscopy and Scanning Electron Microscopy Mapping: A Stony Meteorite Study

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7585
Author(s):  
Maya Musa ◽  
Riccardo Rossini ◽  
Daniela Di Martino ◽  
Maria Pia Riccardi ◽  
Massimiliano Clemenza ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Combined Approach ◽  
Micro Raman Spectroscopy ◽  
Analytical Protocol ◽  
Non Destructive ◽  
The Universe ◽  
Scanning Electron ◽  
Stony Meteorite

Meteorite characterisation represents a privileged and unique opportunity to increase our knowledge about the materials composing the Universe and, particularly, the Proto Solar System. Moreover, meteorites studies evolve contextually with the development of analytical technologies. In the present paper, the results from an unclassified stony meteorite (chondrite) characterisation have been reported on the basis of the innovative analytical protocol presented here. Advanced Mapping by micro-Raman Spectroscopy and Scanning Electron Microscopy equipped with Energy Dispersive Spectroscopy have been combined to disclose molecular and elemental features on the same regions sample at a micrometric resolution. Thanks to their non-destructive properties, the mapping tools of both instruments have been applied to single chondrules analysis and the best match between the mineralogical information and the chemical composition has been obtained. This combined approach proved to be highly suitable in disclosing the crystallinity features of the phases, with in-depth spatial and morphological details too.

Structure of composition-modulated Cu/Ni thin films prepared by electrodeposition

1989 ◽  
Vol 4 (4) ◽  
pp. 755-758 ◽  
Author(s):  
J. Yahalom ◽  
D. F. Tessier ◽  
R. S. Timsit ◽  
A. M. Rosenfeld ◽  
D. F. Mitchell ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Structure ◽  
Composition Modulation ◽  
Transmission Electron ◽  
Electron Energy Loss ◽  
Multilayered Thin Films

Copper/nickel multilayered thin-films prepared by electrodeposition have been examined in cross section by electron energy loss spectroscopy and high-resolution transmission electron microscopy. The results of the examinations provide the first direct experimental evidence of the large composition modulation across successive layers in the thin-film structure and the coherent nature of Cu/Ni interfaces.

scholarly journals Characterization of Polysilicon Films by Raman Spectroscopy and Transmission Electron Microscopy: a Comparative Study

1993 ◽  
Vol 324 ◽  
Author(s):  
David R. Tallant ◽  
Thomas J. Headley ◽  
John W. Medernach ◽  
Franz Geyling
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Cross Section ◽  
Nanometer Scale ◽  
Sampling Depth ◽  
Transmission Electron ◽  
Polysilicon Films

AbstractSamples of chemically-vapor-deposited sub-micrometer-thick films of polysilicon were analyzed by transmission electron microscopy (TEM) in cross-section and by Raman spectroscopy with illumination at their surface. TEM and Raman spectroscopy both find varying amounts of polycrystalline and amorphous silicon in the wafers. Raman spectra obtained using blue, green and red excitation wavelengths to vary the Raman sampling depth are compared with TEM crosssections of these films. Some films have Raman spectra with a band near 497 cm−1, corresponding to numerous nanometer-scale faulted regions in the TEM micrographs.

scholarly journals Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy

2005 ◽  
Vol 8 (3) ◽  
pp. 261-268
Author(s):  
Renato Goulart Jasinevicius ◽  
Arthur José Vieira Porto ◽  
Paulo Sérgio Pizani ◽  
Jaime Gilberto Duduch ◽  
Francisco José Santos
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Silicon Crystal ◽  
Structural Alteration ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer

2014 ◽  
Vol 778-780 ◽  
pp. 394-397 ◽  
Author(s):  
Yun Ji Shin ◽  
Soo In Kim ◽  
Hyeon Jin Jung ◽  
Chang Woo Lee ◽  
Wook Bahng
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Crystallographic Structure ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

We report an investigation of the formation of triangular defects (TDs) in 4H–SiC expitaxial layers using Kelvin probe force microscopy (KPFM) and a nano-indenter. The results provide valuable information on the crystallographic structure, including the polytype nature of the TDs and surface potential profile. The TDs were also characterized using micro-Raman spectroscopy and high-resolution transmission electron microscopy. We found that the TDs were composed of a thick 3C-SiC band, as well as stacking faults (SFs) in the 4H-SiC epilayer.

Improvements in Zone Melt Recrystallized Soi Layers by the Use of Selective Epitaxial Growth in the Seed Windows.

1987 ◽  
Vol 107 ◽  
Author(s):  
D.A. Williams ◽  
R.A. McMahon ◽  
H. Ahmed ◽  
L. Karapiperis ◽  
G. Garry ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Three Dimensional ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Cross Sectional ◽  
Selective Epitaxial Growth ◽  
Beam System ◽  
Transmission Electron ◽  
The One ◽  
Zone Melt

AbstractThe effect of selective epitaxial growth (SEG) of silicon in the seed windows of silicon on insulator structures prior to recrystallization has been investigated. Subsequent zone melt recrystallization of these structures was performed in a dual electron beam system, and it was found that the full planarisation of the deposited silicon layer results in uniform film thickness after recrystallization. Cross sectional scanning and transmission electron microscopy, optical microscopy after defect etching, and bevelling are used to analyse the material. The SEG method improves the uniformity of the film for device island etching, and so is useful for all silicon on insulator applications, although the one of most interest for these investigations is the production of three dimensional circuitry. This is achieved by stacking layers of devices, and so planarity is particularly important.

Magnetic Recording Disk Specimen Preparation for Transmission Electron Microscopy

1990 ◽  
Vol 199 ◽  
Author(s):  
Michael A. Parker ◽  
K. L. Parker ◽  
M. Meininger ◽  
A. Bermea
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Magnetic Recording ◽  
Specimen Preparation ◽  
Disk Specimen ◽  
Transmission Electron ◽  
Preparation Techniques

ABSTRACTModifications to conventional techniques required to prepare specimens from magnetic recording disks are described. Both the preparation of through-foil and cross-section specimens are discussed. The differences between preparation techniques for particulate and thin film disks are elucidated. Micrographs of specimens prepared by various techniques from both types of disk technology are presented that show the relative merits of these methods.

Surface Cleaning and Passivation for the Growth of Si/Oxide/Si Structures

1992 ◽  
Vol 259 ◽  
Author(s):  
Kun—Chih Wang ◽  
Huey—Liang Hwang ◽  
Chung—Yuan Kung ◽  
Tri—Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Cross Section ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Chemical Vapor ◽  
Interface Structure ◽  
Surface Cleaning ◽  
Silicon Surfaces ◽  
Transmission Electron

ABSTRACTThis paper presents the results of surface cleaning and passivation of Si and oxide surfaces for the growth of Si/oxide/Si structures. Silicon surfaces are cleaned by the spin—etch process prior to the growth of silicon oxide. A silicon layer is then deposited after subsequent surface cleaning and chemical treatment on the surface of oxide/Si. Both the oxide and the silicon layers are grown in a plasma enhanced chemical vapor deposition system. The interface structure between layers of deposited Si/oxide/Si are observed by cross—section transmission electron microscopy (XTEM).

Non-Destructive Failure Analysis in Organic Thin-Film Transistors

2009 ◽  
Author(s):  
Shih-Ting Liu ◽  
Tao-Chi Liu ◽  
Ming-Lun Chang ◽  
King-Ting Chiang ◽  
Su-Ping Chiu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Failure Analysis ◽  
Cross Section ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Driving Voltage ◽  
Organic Thin Film ◽  
Resistance Change ◽  
Non Destructive

Abstract Contrary to conventional Si-based device, organic thin-film transistors (OTFTs) constituting organic semiconductors are easily destroyed. Investigating failures using traditional FA techniques like electron microscopy or cross section is hard to procure. Therefore, the purpose of this paper attempts to develop approaches for failure analysis of OTFTs. We successfully demonstrate a non-destructive technique for defect inspection and localization, exactly specifying the failure of OTFT with a void existing in the organic dielectric. Application of optical beam induced resistance change (OBIRCH) in current leakage localization is shown. Non-distorted cross-section sample preparation and analysis of internal structure by electron microscopy are also developed. Moreover, the failure of OTFT induced by high driving voltage punch-through is analyzed using techniques established in the article. Particular elongation of the gate metal was found to be the failure mode.

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