scholarly journals Synthesis of Carbon Nano Materials from Carbohydrate Rich Biogenic Precursors using Chemical Vapor Deposition Method and Optimization of Parameters by Taguchi Optimization Method

2020 ◽  
Vol 3 (7) ◽  
pp. 431-439
Author(s):  
Rohit Kumar
Keyword(s):  
Chemical Vapour ◽  
Chemical Vapor ◽  
Optimization Method ◽  
Chemical Vapor Deposition Method ◽  
Nano Materials ◽  
Deposition Method ◽  
Taguchi Optimization ◽  
Carrier Gas ◽  
Taguchi Optimization Method ◽  
Effective Factor

Carbon Nano Materials (CNM) from biogenic carbohydrate rich non-edible precursors such as Syzygium cumini (Jamun), Tamarindus indica (Imli) and Litchi chinensis (Imli) seeds were synthesized by chemical vapour deposition method (CVD). Parameters were optimized by Taguchi optimization method, four parameters such as precursor, temperature, carrier gas and duration and three levels S. cumini, T. indica and L. chinensis as a precursor, Argon (Ar), Nitrogen (N2) and Hydrogen (H2) as a carrier gas, 1 hour (hr), 2 hours and 3 hours (hrs) for duration of pyrolysis, 800oC, 900oC and 1000oC for temperature were selected. In the present work, impact of precursor is 35.84% which is the most effective factor than temperature (29.59%) and other parameters such as duration (19.50%) and the least effective factor is carrier gas (15.07%). Impact of parameter on the yield which described by the deviation of signal to noise (S/N) ratio. The result of deviation of S/N ratio shows T. indica seed (precursor), 9000C (temperature), 2 hr (duration) and Ar (carrier gas) are the best parameters. The morphology of CNM is studied by SEM characterization and the nature of synthesized CNM by RAMAN spectroscopy.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

Synthesis and Photocatalytic Properties of CNT/Fe-Ni/TiO2 by Fluidized Bed-chemical Vapor Deposition Method

2012 ◽  
Vol 27 (1) ◽  
pp. 33-37 ◽  
Author(s):  
Lei MA ◽  
Ai-Ping CHEN ◽  
Jin-Dong LU ◽  
Hong-Bo HE ◽  
Chun-Zhong LI
Keyword(s):  
Chemical Vapor Deposition ◽  
Fluidized Bed ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Photocatalytic Properties ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

Synthesis of greenish phosphorus on carbon substrate

2021 ◽  
Author(s):  
Haipeng Wang ◽  
Cheng Liu ◽  
HuiLi Wang ◽  
Xinpeng Han ◽  
Shaojie Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Formation Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Carbon Substrate ◽  
Deposition Method ◽  
Critical Factors ◽  
Simple Chemical

One of the phosphorus allotropes called greenish phosphorus was successfully synthesized by simple chemical vapor deposition method. We revealed that the critical factors in the formation mechanism of greenish phosphorus...

Lasing of CdSe/SiO2 nanocables synthesized by the facile chemical vapor deposition method

Nanoscale ◽  
2011 ◽  
Vol 3 (8) ◽  
pp. 3072 ◽  
Author(s):  
Yu Ye ◽  
Yaoguang Ma ◽  
Song Yue ◽  
Lun Dai ◽  
Hu Meng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method
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