scholarly journals PREPARATION AND CHARACTERIZATION OF CDO-NIO NANOCOMPOSITES USING LASER PULSE DEPOSITION APPROACH

2021 ◽  
Vol 03 (03) ◽  
pp. 01-09
Author(s):  
Khamees D. MAHMOOD ◽  
Kadhim A. AADIM ◽  
Mohammed G. HAMMED
Keyword(s):  
Laser Pulse ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pulse Deposition ◽  
Deposited Films

In this manuscript, CdO-NiO nanocomposites (in the form of thin film) with particular concentrations are paper using laser pulse deposition technique under the effect of different laser energies (300, 400, 500, and 600 mJ). Furthermore, the structural, morphological, and optical analyses are thoroughly investigated. In particular, well-oriented deposited films are observed by using X-ray diffraction technique, while the morphological properties are investigated using two different techniques namely field emission scanning electron microscopy and atomic force microscopy which have revealed small nanoparticles with approximate diameter of 50 nm and average surface roughness ranging between 6.5 and 20.3 nm for laser energies of 400 and 600 mJ, respectively. Continuously, the optical technique applied which used UV-Vis analysis has showed cut-off phenomenon at around 339 nm. In the meanwhile, the energy band gap for the deposited films was found to be within the range of 2.2 and 2.4 eV, as a result of different laser energies.

Fabrication of GaN Doped ZnO Nanocrystallines by Laser Ablation

2008 ◽  
Vol 8 (8) ◽  
pp. 4168-4171
Author(s):  
N. Gopalakrishnan ◽  
B. C. Shin ◽  
K. P. Bhuvana ◽  
J. Elanchezhiyan ◽  
T. Balasubramanian
Keyword(s):  
Deep Level ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Ceramic Method ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno ◽  
Krf Excimer Laser ◽  
Photoluminescence Studies

Here, we present the fabrication of pure and GaN doped ZnO nanocrystallines on Si(111) substrates by KrF excimer laser. The targets for the ablation have been prepared by conventional ceramic method. The fabricated nanocrystallines have been investigated by X-ray diffraction, photoluminescence and atomic force microscopy. The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nmand it is 41 nmwhile doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures. The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN. The improved structural, optical and morphological properties of ZnO nanocrystalline due to GaN dopant have been discussed in detail.

Growth and Characterization of bulk GaN by Ga Vapor Transport

2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer
Keyword(s):  
Growth Rates ◽  
Vapor Transport ◽  
Spiral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Gan ◽  
Diffraction Patterns

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

Effects of Annealing on Pulsed Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 446-447 ◽  
pp. 306-311 ◽  
Author(s):  
Sudhanshu Dwivedi ◽  
Somnath Biswas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Morphological Studies ◽  
Atomic Force ◽  
Deposited Films ◽  
Type Crystal

Mixed phase TiO2 thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

Characterization of kaolinite in the hardsetting clay fraction using atomic force microscopy, X-ray diffraction, and the Rietveld method

2017 ◽  
Vol 17 (8) ◽  
pp. 2144-2155 ◽  
Author(s):  
Luis Valério Prandel ◽  
Nívea Maria Piccolomini Dias ◽  
Sérgio da Costa Saab ◽  
André Maurício Brinatti ◽  
Neyde Fabíola Balarezo Giarola ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Rietveld Method ◽  
Clay Fraction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Differential height characteristics of plasmid and G-wire DNA as determined by AFM

1994 ◽  
Vol 52 ◽  
pp. 1052-1053
Author(s):  
T. C. Marsh ◽  
J. Vesenka ◽  
E. Henderson
Keyword(s):  
Plasmid Dna ◽  
Structural Characteristics ◽  
Three Dimensional ◽  
Helical Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dimension One

Atomic-Force Microscopy (AFM) has become an effective tool in the three dimensional characterization of biological systems and is capable of Angstrom sensitivity in the vertical dimension. One unresolved dilemma is that the observed height (diameter) of B-DNA being about 10Å, is less than half its x-ray diffraction value. In this paper we attempt to determine the source of this discrepancy by comparing plasmid DNA co-deposited with a novel form of DNA called “G-wires” (Figure 1). G-wires are formed by G-rich sequences. They are composed of G-4 DNA, a quadruple helical structure. X-ray data of G-4 DNA gives a diameter of 27Å, comparable to that expected for B-DNA (20 to 25Å). In the AFM these structures have a significantly greater height (av. = 22 Å) compared to double stranded (av. = 7 Å) or supercoiled B-DNA (av. = 14 Å) (Figure 2). Thus, the apparent height of nucleic acids in the AFM is dependent upon their innate structural characteristics.

Growth and Characterization of AlN and GaN Thin Films Deposited on Si(111) Substrates Containing a Very Thin Al Layer

2003 ◽  
Vol 798 ◽  
Author(s):  
Zachary J. Reitmeier ◽  
Robert F. Davis
Keyword(s):  
Flow Time ◽  
Buffer Layers ◽  
Nucleation Density ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Aln Buffer ◽  
Peak Widths

ABSTRACTAlN films and GaN films with AlN buffer layers were deposited via metalorganic vapor phase epitaxy on Si(111) substrates previously exposed to trimethylaluminum for increasing times. Atomic force microscopy (AFM) was used to determine the influence of Al pre-flow time on the nucleation and surface morphology of the AlN and GaN films. When preceded by a 10 second Al pre-flow, AlN films feature an increased and more uniform nucleation density as compared to films deposited without Al pre-flows. Ten second Al pre-flows were also found to result in a reduction of the RMS roughness for 100 nm thick AlN films from 3.6 nm to 1.0 nm. AFM of 0.5 μm thick GaN films deposited on AlN buffers with varying pre-flow times showed reduced roughness and decreased pit density when using Al pre-flows of 10 or 20 seconds. High resolution x-ray diffraction of the GaN films showed a reduction in the average full-width halfmaximum (FWHM) of the GaN (00.2) reflection from 1076 arcsec to 914 arcsec when the AlN buffer layer was initiated with a 10 second Al pre-flow. Increasing the pre-flow time to 20 seconds and 30 seconds resulted in average (00.2) FWHM values of 925 arcsec and 928 arcsec, respectively. Similar behavior of the peak widths was observed for the (30.2) and (10.3) reflections when the pre-flow times were varied from 0 to 30 seconds.

Optical and Structural Properties of TiO2 Films Deposited from Different Titanium Oxide Materials by Electron Beam

2010 ◽  
Vol 663-665 ◽  
pp. 401-404
Author(s):  
Feng Xiang Wang ◽  
Chang Kwon Hwangbo ◽  
Bu Yong Jung ◽  
Jun He Qi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Near Infrared ◽  
Chemical Properties ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Source Materials ◽  
Deposited Films

TiO2 thin films were deposited from Ti2¬O3, TiO2 and Ti3O5 source materials by e-beam. The refractive index and extinction coefficient of the films in the visible and near infrared（IR） region were measured. The structural and chemical properties of the films were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS). XRD measurements revealed that all the deposited films were amorphous. XPS analysis showed the films were stoichiometric TiO2. The AFM investigation confirmed that the surface roughness of the films was dependent on the deposition conditions.

Characterization of a SiC/SiC composite by X-ray diffraction, atomic force microscopy and positron spectroscopies

2006 ◽  
Vol 252 (9) ◽  
pp. 3342-3351 ◽  
Author(s):  
G. Brauer ◽  
W. Anwand ◽  
F. Eichhorn ◽  
W. Skorupa ◽  
C. Hofer ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Preparation and Characterization of (CO3O5, Fe2O3: Sn) Nanocomposite for Sensitize Photoelectrodes

2021 ◽  
Vol 1039 ◽  
pp. 326-331
Author(s):  
Haleemah J. Mohammed
Keyword(s):  
Laser Pulse ◽  
Raw Materials ◽  
Second Step ◽  
Electrolysis Cell ◽  
X Ray Diffraction ◽  
Yag Laser ◽  
X Ray ◽  
Atomic Force ◽  
Electrochemical Parameters

Preparation of nanocomposite ( CO3O5,Fe2O3: Sn ) was chemically held from its raw materials as a first step of this research in order to manufacture photoelectrode , this nanocomposite was deposited on substrate glass using spraying technique and heat treatment by Nd: YAG laser pulse (LPD) . Experiments were conducted to study the surface topography of the nanocompound by (AFM) to determine the roughness of the prepared electrode, In addition, the structure characteristics were studied using the x-ray diffraction (XRD) to determine the main phase. The second step of this research was designing a glass electrolysis cell containing our nanoelectrode and producing hydrogen. Finally the electrochemical parameters of the designed cell were studied Key words: nanocomposite (CO3O5,Fe2O3:Sn), Nd: YAG laser pulse (LPD) , Photoelectrodes; atomic force microscope.

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