scholarly journals IMPACT OF METAL SOURCE/DRAIN CONTACTS ON GE-ON INSULATOR (GEOI) MOSFETS

2014 ◽  
pp. 294-297
Author(s):  
CHANDRIMA MONDAL ◽  
ABHIJIT BISWAS
Keyword(s):  
Work Function ◽  
Voltage Gain ◽  
Band Diagram ◽  
Subthreshold Slope ◽  
Metal Contacts ◽  
Electrical Behavior ◽  
Metal Source ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Numerical Device

This paper presents the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current.

scholarly journals STUDIES ON GE-ON-INSULATOR MOSFETS USING METAL SOURCE/DRAIN CONTACTS FOR ANALOG/ MIXED SIGNAL APPLICATIONS

2014 ◽  
pp. 290-293
Author(s):  
CHANDRIMA MONDAL ◽  
ABHIJIT BISWAS
Keyword(s):  
Work Function ◽  
Voltage Gain ◽  
Band Diagram ◽  
Subthreshold Slope ◽  
Metal Contacts ◽  
Electrical Behavior ◽  
Metal Source ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Numerical Device

In this paper, we report the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current.

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

2010 ◽  
Vol 645-648 ◽  
pp. 239-242 ◽  
Author(s):  
Takuro Tomita ◽  
M. Iwami ◽  
M. Yamamoto ◽  
M. Deki ◽  
Shigeki Matsuo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Specific Resistance ◽  
Single Crystal Silicon ◽  
Metal Contacts ◽  
Crystal Silicon ◽  
Current Voltage ◽  
Fs Laser ◽  
Current Voltage Characteristics

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

Field Emission Energy Distribution and Current-Voltage Characteristics Using Single Tip Gated Diodes

1999 ◽  
Vol 558 ◽  
Author(s):  
John M Bernhard ◽  
Ambrosio A. Rouse ◽  
Edward D. Sosa ◽  
Bruce E. Gnade ◽  
David E. Golden ◽  
...  
Keyword(s):  
Energy Distribution ◽  
Data Acquisition ◽  
Work Function ◽  
Field Emission ◽  
Low Cost ◽  
Energy Analyzer ◽  
Flat Surfaces ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Camac Crate

ABSTRACTField emission current-voltage characteristics and simultaneous field emission electron energy distributions have been measured using single tip gate diodes. An energy distribution is generated at each step of a current-voltage characteristic using a compact low-cost simulated hemispherical energy analyzer. A PC programmed with graphics-based data acquisition software is used for data acquisition and control. The PC is connected to a CAMAC crate and a picoammeter through a GPIB interface. The picoammeter measures the current leaving the tip and the field emission electrons are energy analyzed, detected and processed in the CAMAC crate. The CAMAC crate also sends control voltages. to the gate anode and the energy analyzer. This apparatus was used to measure tip work functions and Fowler-Nordheim tip shape parameters for Mo and IrO2 field emission tips. Work function measurements from field emission tips are compared to photoelectric work function measurements from flat surfaces.

Simulation of Polarization Effect in GaN/AlN Resonant Tunneling Diode

2013 ◽  
Vol 774-776 ◽  
pp. 691-694
Author(s):  
Nai Yun Tang
Keyword(s):  
Electronic Properties ◽  
Resonant Tunneling ◽  
Polarization Effect ◽  
Resonant Tunneling Diode ◽  
Band Diagram ◽  
Poisson Equations ◽  
Tunneling Diode ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

Influence of polarization effect on current across GaN/AlNresonant tunneling diode (RTD) is simulated by self-consistent calculations ofSchrödinger and Poisson equations. When taking into account polarization chargesat the heterointerface, the band diagram and electronic properties of RTD areobviously changed. As a result, the current-voltage characteristics showsasymmetrical phenomenon. As the polarization effect is enhanced, the resonancepeak is shifted accordingly and even disappears.

The high-temperature TEC at reduced cesium vapor pressures and with the ultrahigh-temperature collector

2020 ◽  
Author(s):  
M.S. Yashin ◽  
V.V. Onufriev
Keyword(s):  
High Temperature ◽  
Work Function ◽  
Maximum Output Power ◽  
Experimental Studies ◽  
Electron Work Function ◽  
Maximum Output ◽  
Cesium Vapor ◽  
Vapor Pressures ◽  
Current Voltage ◽  
Current Voltage Characteristics

The current-voltage characteristics of a high-temperature thermionic energy converter (TEC) with a homogeneous and macroscopically inhomogeneous (component) collector at a reduced cesium vapor pressure were calculated numerically. The case when the surface of the TEC collector is a set of periodically located macroscopic elements with different work function is considered. Based on a comparative analysis of the distributions of the parameters of low-temperature cesium plasma along the length of the interelectrode gap for various points of the current-voltage characteristics for two collector options, qualitative conclusions are made about the difference between the processes that occur in the converter with a component collector and the effect of these processes on the course of the current-voltage characteristic. The results indicate the advantage of the TEC with a component collector relative to a converter with a homogeneous collector, in the most interesting, from the point of view of generating electric energy (maximum output power), current-voltage characteristics. To obtain quantitative dependences of the influence of macroscopic in homogeneity of the collector on the electron work function on the output characteristics of a high-temperature TEC, it is necessary to conduct optimization numerical experiments and experimental studies.

scholarly journals Формирование гетероперехода II типа в полупроводниковой структуре InAsSb/InAsSbP

2020 ◽  
Vol 62 (11) ◽  
pp. 1822
Author(s):  
В.В. Романов ◽  
Э.В. Иванов ◽  
К.Д. Моисеев
Keyword(s):  
Gas Phase ◽  
Forward Bias ◽  
Energy Band Diagram ◽  
Organometallic Compounds ◽  
Blue Shift ◽  
Type Ii ◽  
Band Diagram ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Main Emission Band

The results of studying the electroluminescent and current-voltage characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by gas-phase epitaxy from organometallic compounds are presented. Intense electroluminescence was detected in the spectral range 0.23–0.29 eV at the temperature T = 77 K. The position of the maximum of the main emission band (h ~ 0.24 eV) showed a noticeable “blue” shift with increasing applied forward bias. Based on the performed studies, it was concluded that there is a staggered type II heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface, which is confirmed by the results of the calculation of the energy band diagram.

Electroluminescence from ZnO/n+-Si Heterojunction

2007 ◽  
Vol 131-133 ◽  
pp. 625-628 ◽  
Author(s):  
Xiang Yang Ma ◽  
Pei Liang Chen ◽  
Dong Sheng Li ◽  
De Ren Yang
Keyword(s):  
Electron Concentration ◽  
Silicon Substrate ◽  
Forward Bias ◽  
Energy Band Diagram ◽  
Near Band Edge ◽  
Band Diagram ◽  
Zno Film ◽  
Si Substrate ◽  
Current Voltage ◽  
Current Voltage Characteristics

The ZnO/n+-Si heterojunction has been fabricated via depositing nominally undoped ZnO film by reactive sputtering on a heavily arsenic-doped (n+) silicon substrate. The sputtered ZnO film was n-type in conductivity with an electron concentration of 1.0×1018 cm-3. The current-voltage characteristics indicate that the ZnO/n+-Si heterojunction does not possess rectifying function. Under the forward bias with the negative voltage applied on the n+-Si substrate, the heterojunction emits ultraviolet and broad visible lights characteristics of near-band-edge and defect-related emissions of ZnO, respectively. The EL mechanism has been tentatively explained in terms of the energy-band diagram.

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