scholarly journals Формирование гетероперехода II типа в полупроводниковой структуре InAsSb/InAsSbP

2020 ◽  
Vol 62 (11) ◽  
pp. 1822
Author(s):  
В.В. Романов ◽  
Э.В. Иванов ◽  
К.Д. Моисеев
Keyword(s):  
Gas Phase ◽  
Forward Bias ◽  
Energy Band Diagram ◽  
Organometallic Compounds ◽  
Blue Shift ◽  
Type Ii ◽  
Band Diagram ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Main Emission Band

The results of studying the electroluminescent and current-voltage characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by gas-phase epitaxy from organometallic compounds are presented. Intense electroluminescence was detected in the spectral range 0.23–0.29 eV at the temperature T = 77 K. The position of the maximum of the main emission band (h ~ 0.24 eV) showed a noticeable “blue” shift with increasing applied forward bias. Based on the performed studies, it was concluded that there is a staggered type II heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface, which is confirmed by the results of the calculation of the energy band diagram.

Electroluminescence from ZnO/n+-Si Heterojunction

2007 ◽  
Vol 131-133 ◽  
pp. 625-628 ◽  
Author(s):  
Xiang Yang Ma ◽  
Pei Liang Chen ◽  
Dong Sheng Li ◽  
De Ren Yang
Keyword(s):  
Electron Concentration ◽  
Silicon Substrate ◽  
Forward Bias ◽  
Energy Band Diagram ◽  
Near Band Edge ◽  
Band Diagram ◽  
Zno Film ◽  
Si Substrate ◽  
Current Voltage ◽  
Current Voltage Characteristics

The ZnO/n+-Si heterojunction has been fabricated via depositing nominally undoped ZnO film by reactive sputtering on a heavily arsenic-doped (n+) silicon substrate. The sputtered ZnO film was n-type in conductivity with an electron concentration of 1.0×1018 cm-3. The current-voltage characteristics indicate that the ZnO/n+-Si heterojunction does not possess rectifying function. Under the forward bias with the negative voltage applied on the n+-Si substrate, the heterojunction emits ultraviolet and broad visible lights characteristics of near-band-edge and defect-related emissions of ZnO, respectively. The EL mechanism has been tentatively explained in terms of the energy-band diagram.

scholarly journals Исследование механизмов токопрохождения в гетероструктуре CdS/por-Si/p-Si

2018 ◽  
Vol 52 (7) ◽  
pp. 751
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин
Keyword(s):  
Current Flow ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Current Voltage Characteristic ◽  
Semiconductor Heterostructure ◽  
Current Voltage ◽  
Recombination Processes ◽  
Flow Mechanisms ◽  
Carrier Tunneling ◽  
Space Charge Limited Currents

AbstractThe temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por -Si/ p -Si heterojunction, carrier tunneling in the por -Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.

Asymmetric current-voltage characteristics in type-II superconductors

1994 ◽  
Vol 49 (13) ◽  
pp. 9244-9247 ◽  
Author(s):  
Xiuguang Jiang ◽  
P. J. Connolly ◽  
S. J. Hagen ◽  
C. J. Lobb
Keyword(s):  
Type Ii ◽  
Type Ii Superconductors ◽  
Current Voltage ◽  
Current Voltage Characteristics

Self-consistent modeling of the current–voltage characteristics of resonant tunneling structures with type II heterojunctions

1997 ◽  
Vol 82 (5) ◽  
pp. 2421-2426 ◽  
Author(s):  
I. Lapushkin ◽  
A. Zakharova ◽  
V. Gergel ◽  
H. Goronkin ◽  
S. Tehrani
Keyword(s):  
Resonant Tunneling ◽  
Type Ii ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes

2014 ◽  
Vol 778-780 ◽  
pp. 710-713 ◽  
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Ji Sheng Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface Traps ◽  
Barrier Heights ◽  
Current Voltage ◽  
Donor Type ◽  
Current Voltage Characteristics ◽  
Expected Values

This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I–V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I–V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I–V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.

CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

2018 ◽  
Vol 25 (04) ◽  
pp. 1850082 ◽  
Author(s):  
NEZIR YILDIRIM ◽  
ABDULMECIT TURUT ◽  
HULYA DOGAN
Keyword(s):  
Barrier Height ◽  
Forward Bias ◽  
Schottky Contacts ◽  
Current Voltage Characteristic ◽  
Gaussian Distributions ◽  
Linear Behavior ◽  
Current Voltage ◽  
Device Applications ◽  
Barrier Type ◽  
Current Voltage Characteristics

The Schottky barrier type Ni/[Formula: see text]-GaAs contacts fabricated by us were thermally annealed at 600[Formula: see text]C and 700[Formula: see text]C for 1[Formula: see text]min. The apparent barrier height [Formula: see text] and ideality factor of the diodes were calculated from the forward bias current–voltage characteristic in 60–320[Formula: see text]K range. The [Formula: see text] values for the nonannealed and 600[Formula: see text]C and 700[Formula: see text]C annealed diodes were obtained as 0.80, 0.81 and 0.67[Formula: see text]eV at 300[Formula: see text]K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700[Formula: see text]C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the [Formula: see text] versus [Formula: see text] plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

The Nature of Native and Light Induced Defect States in i-layers of High Quality a-Si:H Solar Cells Derived from Dark Forward-Bias Current-Voltage Characteristics

2005 ◽  
Vol 862 ◽  
Author(s):  
J. Deng ◽  
M. L. Albert ◽  
J. M. Pearce ◽  
R. W. Collins ◽  
C. R. Wronski
Keyword(s):  
Solar Cells ◽  
Forward Bias ◽  
Bias Current ◽  
Defect State ◽  
Defect States ◽  
High Quality ◽  
Hydrogen Dilution ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Gap States

AbstractResults are presented on the defect state distributions in intrinsic a-Si:H layers with and without hydrogen dilution in p-i-n solar cells obtained directly from the analysis of dark forwardbias current-voltage (JD-V) characteristics. It is shown that there are distinct differences in the distributions of both native and light induced defect states between the two types of i-layers. Computer simulations using these distributions are presented which show excellent agreement with the experimental results not only for the JD-V but more importantly for the bias dependent differential diode quality factor n(V) characteristics. Results are also presented on the nature of the gap states and their evolution with light induced degradation as well as their effects on the performance and stability of high quality a-Si:H solar cells.

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