The effect of contact capacitance on current-voltage characteristics of stationary metal contacts

1998 ◽  
Vol 21 (4) ◽  
pp. 530-540 ◽  
Author(s):  
Constantine T. Dervos ◽  
Joseph M. Michaelides
Keyword(s):  
Metal Contacts ◽  
Current Voltage ◽  
Current Voltage Characteristics

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

2010 ◽  
Vol 645-648 ◽  
pp. 239-242 ◽  
Author(s):  
Takuro Tomita ◽  
M. Iwami ◽  
M. Yamamoto ◽  
M. Deki ◽  
Shigeki Matsuo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Specific Resistance ◽  
Single Crystal Silicon ◽  
Metal Contacts ◽  
Crystal Silicon ◽  
Current Voltage ◽  
Fs Laser ◽  
Current Voltage Characteristics

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

scholarly journals STUDIES ON GE-ON-INSULATOR MOSFETS USING METAL SOURCE/DRAIN CONTACTS FOR ANALOG/ MIXED SIGNAL APPLICATIONS

2014 ◽  
pp. 290-293
Author(s):  
CHANDRIMA MONDAL ◽  
ABHIJIT BISWAS
Keyword(s):  
Work Function ◽  
Voltage Gain ◽  
Band Diagram ◽  
Subthreshold Slope ◽  
Metal Contacts ◽  
Electrical Behavior ◽  
Metal Source ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Numerical Device

In this paper, we report the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current.

scholarly journals IMPACT OF METAL SOURCE/DRAIN CONTACTS ON GE-ON INSULATOR (GEOI) MOSFETS

2014 ◽  
pp. 294-297
Author(s):  
CHANDRIMA MONDAL ◽  
ABHIJIT BISWAS
Keyword(s):  
Work Function ◽  
Voltage Gain ◽  
Band Diagram ◽  
Subthreshold Slope ◽  
Metal Contacts ◽  
Electrical Behavior ◽  
Metal Source ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Numerical Device

This paper presents the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current.

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