scholarly journals Low Temperature Bonding Process Using Cu Nanoparticles and Mixed Ag-Cu Nanoparticles

2010 ◽  
Vol 13 (7) ◽  
pp. 536-542
Author(s):  
Masami Nakamoto ◽  
Toru Nagaoka ◽  
Yoshiaki Morisada ◽  
Masao Fukusumi ◽  
Yukiyasu Kashiwagi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Bonding Process ◽  
Cu Nanoparticles ◽  
Low Temperature Bonding

Fabrication of reliable Cu-Cu joints by low temperature bonding isopropanol stabilized Cu nanoparticles in air

2018 ◽  
Vol 229 ◽  
pp. 353-356 ◽  
Author(s):  
Yun Mou ◽  
Hao Cheng ◽  
Yang Peng ◽  
Mingxiang Chen
Keyword(s):  
Low Temperature ◽  
Cu Nanoparticles ◽  
Low Temperature Bonding

TLP Bonding Technologies for Micro Joining and 3D Packaging

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Tlp Bonding ◽  
Hermetic Sealing ◽  
Low Temperature Bonding ◽  
Free Material ◽  
Bonding Technique

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.

Low Temperature Direct Cu-Cu Immersion Bonding for 3D Integration

2009 ◽  
Vol 1156 ◽  
Author(s):  
Rahul Agarwal ◽  
Wouter Ruythooren
Keyword(s):  
Citric Acid ◽  
Low Temperature ◽  
Bonding Temperature ◽  
Atmospheric Condition ◽  
High Strength ◽  
Bonding Process ◽  
3D Integration ◽  
Temperature And Pressure ◽  
Low Temperature Bonding

AbstractHigh yielding and high strength Cu-Cu thermo-compression bonds have been obtained at temperatures as low as 175°C. Plated Cu bumps are used for bonding, without any surface planarization step or plasma treatment, and bonding is performed at atmospheric condition. In this work the 25μm diameter bumps are used at a bump pitch of 100μm and 40μm. Low temperature bonding is achieved by using immersion bonding in citric acid. Citric acid provides in-situ cleaning of the Cu surface during the bonding process. The daisy chain electrical bonding yield ranges from 84%-100% depending on the bonding temperature and pressure.

Low Temperature Sintering Bonding Process Using Ag Nanoparticles Derived from Ag2O for Packaging of High-Temperature Electronics

2012 ◽  
Vol 706-709 ◽  
pp. 2962-2967 ◽  
Author(s):  
Akio Hirose ◽  
Naoya Takeda ◽  
Yosuke Konaka ◽  
Hiroaki Tatsumi ◽  
Yusuke Akada ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ag Nanoparticles ◽  
Electronics Packaging ◽  
Bonding Process ◽  
Low Temperature Sintering ◽  
High Melting Point ◽  
Organic Nanoparticles ◽  
High Temperature Electronics ◽  
Low Temperature Bonding

A novel bonding process using Ag2O paste composed of Ag2O particles and a reducing agent has been proposed as a Pb-free alternative of high melting point solders in electronics packaging. Ag2O paste formed Ag nanoparticles through the redox reaction in the bonding process and in-situ formed Ag nanoparticles sintered immediately. While the bonding process using Ag metallo-organic nanoparticles, which have been proposed, was unfavorable to the bonding at 250 degree Celsius or lower in terms of requiring removal of stable organic shells, the bonding process using Ag2O paste demonstrated the possibility of further low-temperature bonding.

A low temperature bonding process using deposited gold-tin composites

1992 ◽  
Vol 208 (2) ◽  
pp. 202-209 ◽  
Author(s):  
Chin C. Lee ◽  
Chen Y. Wang
Keyword(s):  
Low Temperature ◽  
Bonding Process ◽  
Low Temperature Bonding

scholarly journals Effect of PVP on the low temperature bonding process using polyol prepared Ag nanoparticle paste for electronic packaging application

2012 ◽  
Vol 379 ◽  
pp. 012024 ◽  
Author(s):  
Jianfeng Yan ◽  
Guisheng Zou ◽  
Aiping Wu ◽  
Jialie Ren ◽  
Jiuchun Yan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electronic Packaging ◽  
Bonding Process ◽  
Ag Nanoparticle ◽  
Low Temperature Bonding
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