Scanning Scratch Tests for Evaluating the Adhesion of Thin Oxide Films on Stainless Steel

1994 ◽  
Vol 356 ◽  
Author(s):  
V. A. C. Haanappel ◽  
H. D. van Corbach ◽  
T. Fransen ◽  
P. J. Gellings
Keyword(s):  
Mechanical Properties ◽  
Growth Rate ◽  
Stainless Steel ◽  
Film Thickness ◽  
Critical Load ◽  
Deposition Temperature ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Thin Oxide Films ◽  
Type Aisi

AbstractAmorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low pressure (0.17 kPa (1.25 torr)).The effect of deposition temperature (200 − 380 °C), growth rate, film thickness, and post-deposition thermal treatment on the mechanical properties was studied. The experiments were performed with a scanning-scratch tester. The experiments are based on the estimation of the film adhesion to the substrate by determining a critical load, Lc: the load where the film starts to spall or to delaminate.The best mechanical properties were obtained with unannealed samples. After thermal annealing the critical load decreases. Regarding the unannealed samples, the critical load increased with increasing film thickness. The deposition temperature and the growth rate had no effect on the critical load.

Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition

2019 ◽  
Vol 52 (3) ◽  
pp. 637-642 ◽  
Author(s):  
Jiang-Dong Gao ◽  
Jian-Li Zhang ◽  
Xin Zhu ◽  
Xiao-Ming Wu ◽  
Chun-Lan Mo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapour ◽  
Direct Consequence ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Film Boundary ◽  
Detailed Surface ◽  
Boundary Facet ◽  
Metal Organic ◽  
Gan Film

The growth mechanism of V-defects in GaN films was investigated. It was observed that the crystal faces of both the sidewall of a V-defect and the sidewall of the GaN film boundary belong to the same plane family of \{ {{{10\bar 11}}} \}, which suggests that the formation of the V-defect is a direct consequence of spontaneous growth like that of the boundary facet. However, the growth rate of the V-defect sidewall is much faster than that of the boundary facet when the V-defect is filling up, implying that lateral growth of \{ {{{10\bar 11}}} \} planes is not the direct cause of the change in size of V-defects. Since V-defects originate from dislocations, an idea was proposed to correlate the growth of V-defects with the presence of dislocations. Specifically, the change in size of the V-defect is determined by the growth rate around dislocations and the growth rate around dislocations is determined by the growth conditions.

scholarly journals The mechanical properties of thin alumina films deposited by metal-organic chemical vapour deposition

1995 ◽  
Vol 254 (1-2) ◽  
pp. 153-163 ◽  
Author(s):  
V.A.C. Haanappel ◽  
D.v.d. Vendel ◽  
H.S.C. Metselaar ◽  
H.D. van Corbach ◽  
T. Fransen ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Alumina Films ◽  
Metal Organic

MOCVD of Bi2Te3 and Sb2Te3 on GaAs Substrates for Thin-Film Thermoelectric Applications

2006 ◽  
Vol 6 (11) ◽  
pp. 3325-3328 ◽  
Author(s):  
Jeong-Hun Kim ◽  
Yong-Chul Jung ◽  
Sang-Hee Suh ◽  
Jin-Sang Kim
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Thermoelectric Device ◽  
Organic Chemical ◽  
Gaas Substrates ◽  
Metal Organic ◽  
Surface Morphologies

Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of −160 μVK−1 for Bi2Te3 and + 110 μVK−1 for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

The Effects of Deposition temperature on the Growth of Copper films produced by low pressure metal-organic chemical vapour deposition

1995 ◽  
Vol 391 ◽  
Author(s):  
S.S. Yoon ◽  
S.W. Kang ◽  
S.S. Chun
Keyword(s):  
Chemical Vapour Deposition ◽  
Deposition Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Organic Chemical ◽  
Copper Films ◽  
Cross Sectional ◽  
Initial Stage ◽  
Metal Organic

AbstractCopper was deposited onto TiN by low pressure metal-organic chemical vapour deposition, using hfacCu(I)TMVS and argon carrier gas. The effects of the deposition temperature on the growth of copper films were investigated by observing the surface morphology and the cross sectional morphology of copper films. At the initial stage of growth, copper films tended to have the island-like growth mode, irrespective of the deposition temperatures. It was also observed that the aspect ratio(=height to width) of the islands gradually increased as the deposition temperature increased. The poorer movability of the copper atoms at the higher deposition temperature was evaluated on the basis of hindering effect by the following copper deposits.

scholarly journals Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

2018 ◽  
Vol 5 (2) ◽  
pp. 171757 ◽  
Author(s):  
Jian Li ◽  
Ze-yuan Fei ◽  
Yi-feng Xu ◽  
Jie Wang ◽  
Bing-feng Fan ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Response Surface ◽  
Cfd Simulation ◽  
Chemical Vapour ◽  
Transient State ◽  
Response Surface Model ◽  
Organic Chemical ◽  
Surface Model ◽  
Semiconductor Laser Diodes

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

scholarly journals Electrical Properties of Semiconducting Copper Zinc Sulphide Thin Films

2021 ◽  
Vol 22 (1) ◽  
Author(s):  
Joseph Onyeka Emegha ◽  
Bolutife Olofinjana ◽  
Kingsley Eghonghon Ukhurebor ◽  
Joseph Taye Adegbite ◽  
Marcus Adebola Eleruja
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Temperature ◽  
Chemical Vapour ◽  
Soda Lime ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Chemical ◽  
Temperature Range ◽  
Copper Zinc

The electrical properties of metal-organic-chemical-vapour-deposited copper zinc sulphide (Cu-Zn-S) thin films on soda-lime substrates were studied. The films produced were characterized in terms of their electrical properties employing the Four-point probe procedure at a temperature range of 370 to 470°C. The electrical properties (resistivity and conductivity) of the deposited copper zinc sulphide films were systematically studied in terms of the deposition parameters of concentration and deposition temperature. The conductivity was in the interval of 5.48 to 8.0 × 10-1 (Ω.cm)-1. Activation energies of 0.54 and 0.29 eV in the deposition temperature range were estimated. The high resistive property of the films re-emphasized the potential use of these materials as active semiconductors for optoelectronic device applications.

Sign in / Sign up

Export Citation Format

Share Document