scholarly journals Effect of Deposition Temperature on the Properties of Copper-Zinc Sulphide Thin Films using Mixed Copper and Zinc Dithiocarbamate Precursors

2021 ◽  
Author(s):  
Joseph EMEGHA ◽  
Bolutife OLOFİNJANA ◽  
Kingsley UKHUREBOR ◽  
Uyiosa AİGBE ◽  
Samuel AZİ ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Zinc Sulphide ◽  
Copper And Zinc ◽  
Copper Zinc

scholarly journals Electrical Properties of Semiconducting Copper Zinc Sulphide Thin Films

2021 ◽  
Vol 22 (1) ◽  
Author(s):  
Joseph Onyeka Emegha ◽  
Bolutife Olofinjana ◽  
Kingsley Eghonghon Ukhurebor ◽  
Joseph Taye Adegbite ◽  
Marcus Adebola Eleruja
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Temperature ◽  
Chemical Vapour ◽  
Soda Lime ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Chemical ◽  
Temperature Range ◽  
Copper Zinc

The electrical properties of metal-organic-chemical-vapour-deposited copper zinc sulphide (Cu-Zn-S) thin films on soda-lime substrates were studied. The films produced were characterized in terms of their electrical properties employing the Four-point probe procedure at a temperature range of 370 to 470°C. The electrical properties (resistivity and conductivity) of the deposited copper zinc sulphide films were systematically studied in terms of the deposition parameters of concentration and deposition temperature. The conductivity was in the interval of 5.48 to 8.0 × 10-1 (Ω.cm)-1. Activation energies of 0.54 and 0.29 eV in the deposition temperature range were estimated. The high resistive property of the films re-emphasized the potential use of these materials as active semiconductors for optoelectronic device applications.

scholarly journals Fabrication, Structural, Optical, Electrical Properties and Influence of Complexing Agents on Ternary CuZnS2 Thin Film

2021 ◽  
Vol 33 (11) ◽  
pp. 2762-2766
Author(s):  
E. Anuja ◽  
R. Thiruneelakandan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Plate ◽  
Zinc Sulphide ◽  
Complexing Agents ◽  
Absorption Studies ◽  
Type Semiconductor ◽  
Hall Effect Measurements ◽  
Copper Zinc ◽  
P Type

In the present work, copper zinc sulphide (CuZnS2) thin films with and without complexing agents using glass plate as substrate were prepared. Chemical bath deposition method was employed to deposit the thin films. Powder X-ray diffraction (PXRD) patterns of the prepared films indicate the crystalline nature of CuZnS2 with cubic phases. The SEM and AFM images illustrate that the deposited films were highly influenced on the polyhedral morphology by the complexing agents. The influence of complexing agents on absorbance and band gap of the CuZnS2 thin films were characterized using UV-Vis absorption studies. Hall effect measurements indicate the CuZnS2 thin film without surfactant belongs to p-type semiconductor and become n-type after adding the complexing agents EDTA and Leishman stain. From the I-V curve, all the samples having slow conducting nature was found for changing the voltage with the current from -32 nA to +30 nA using solar stimulator.

scholarly journals PREPARATION AND CHARACTERIZATION OF METAL ORGANIC CHEMICAL VAPOUR DEPOSITED COPPER ZINC SULPHIDE THIN FILMS USING SINGLE SOLID SOURCE PRECURSORS

2019 ◽  
Vol 4 (1) ◽  
pp. 11-22
Author(s):  
Joseph Onyeka EMEGHA ◽  
◽  
John DAMISA ◽  
Frank Ochuko-oghene EFE ◽  
Bolutife OLOFINJANA ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour ◽  
Zinc Sulphide ◽  
Organic Chemical ◽  
Metal Organic ◽  
Copper Zinc

Optical Properties of Zinc Sulphide Thin Films Coated with Aqueous Organic Dye Extract for Solar and Optoelectronic Device Applications

2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Dye ◽  
Device Applications

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Deposition temperature and UV irradiation effects on the H2S sensing properties of Te thin films

2015 ◽  
Vol 119 (2) ◽  
pp. 659-665
Author(s):  
M. Manouchehrian ◽  
M. M. Larijani ◽  
S. M. Elahi ◽  
M. A. Moghri Moazzen
Keyword(s):  
Thin Films ◽  
Uv Irradiation ◽  
Deposition Temperature ◽  
Irradiation Effects ◽  
Sensing Properties
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