A Appropriate Flux Generating Conditions for Semiconductor Etching Simulation

2015 ◽  
Vol 52 (3) ◽  
pp. 105-115
Author(s):  
Seunghan Jeong ◽  
Oubong Gwun ◽  
Seongsik Shin
Keyword(s):  
Semiconductor Etching

scholarly journals An Elementary Model for Control of a Semiconductor Etching Process

SIAM Review ◽  
2002 ◽  
Vol 44 (4) ◽  
pp. 678-695
Author(s):  
A. Madhukar ◽  
T. Parent ◽  
I. G. Rosen ◽  
C. Wang
Keyword(s):  
Etching Process ◽  
Elementary Model ◽  
Semiconductor Etching

scholarly journals Optically monitoring and controlling nanoscale topography during semiconductor etching

2012 ◽  
Vol 1 (9) ◽  
pp. e30-e30 ◽  
Author(s):  
Chris Edwards ◽  
Amir Arbabi ◽  
Gabriel Popescu ◽  
Lynford L Goddard
Keyword(s):  
Semiconductor Etching ◽  
Nanoscale Topography

Doping Effects on the Etching Chemistry of GaAs and Si

1990 ◽  
Vol 204 ◽  
Author(s):  
F. A. Houle
Keyword(s):  
Etch Rate ◽  
Driving Forces ◽  
Surface Region ◽  
Near Surface ◽  
Doping Effects ◽  
Independent Mechanism ◽  
Semiconductor Etching ◽  
Surface Intermediates ◽  
Microscopic Picture ◽  
P Type

ABSTRACTDoping effects on semiconductor etching rates have been proposed to be associated with field effects in the near-surface region. Detailed investigations of the chemistry of nand p-type Si and GaAs indicate that the majority carrier can also play an important role in determining the reactivity of surface intermediates, providing an independent mechanism for influencing the etch rate. A microscopic picture of central driving forces in semiconductor etching deduced from the doping cffects is proposed.

Rapid reagent-less on-line H 2 O 2 quantification in alkaline semiconductor etching solution

Talanta ◽  
2017 ◽  
Vol 171 ◽  
pp. 39-44 ◽  
Author(s):  
Roumen Zlatev ◽  
Margarita Stoytcheva ◽  
Benjamin Valdez ◽  
Rojelio Ramos
Keyword(s):  
Etching Solution ◽  
Semiconductor Etching ◽  
On Line

scholarly journals Self-organized pore formation and open-loop control in semiconductor etching

2003 ◽  
Vol 13 (1) ◽  
pp. 217-224 ◽  
Author(s):  
Jens Christian Claussen ◽  
Jürgen Carstensen ◽  
Marc Christophersen ◽  
Sergiu Langa ◽  
Helmut Föll
Keyword(s):  
Pore Formation ◽  
Open Loop ◽  
Open Loop Control ◽  
Loop Control ◽  
Self Organized ◽  
Semiconductor Etching

scholarly journals Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source

1996 ◽  
Vol 421 ◽  
Author(s):  
C. Constantine ◽  
D. Johnson ◽  
C. Barratt ◽  
R. J. Shul ◽  
G. B. Mcclellan ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Large Area ◽  
Inductively Coupled ◽  
Semiconductor Etching ◽  
Deposition Processes ◽  
Gan Etching ◽  
Very High

AbstractInductively Coupled Plasma (ICP) sources are extremely promising for large-area, highion density etching or deposition processes. In this review we compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same singlewafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.

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