P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process

2020 ◽  
Vol 20 (6) ◽  
pp. 485-490
Author(s):  
Won-Ho Jang ◽  
Kwang-Seok Seo ◽  
Ho-Young Cha
Keyword(s):  
Etching Process ◽  
Gan Etching

XPS study of a selective GaN etching process using self-limiting cyclic approach for power devices application

2020 ◽  
Vol 228 ◽  
pp. 111328
Author(s):  
Frédéric Le Roux ◽  
Nicolas Possémé ◽  
Pauline Burtin ◽  
Sébastien Barnola ◽  
Alphonse Torres
Keyword(s):  
Etching Process ◽  
Power Devices ◽  
Xps Study ◽  
Gan Etching ◽  
Cyclic Approach

scholarly journals Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 268
Author(s):  
Il-Hwan Hwang ◽  
Ho-Young Cha ◽  
Kwang-Seok Seo
Keyword(s):  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Atomic Layer ◽  
Etching Process ◽  
Etching Depth ◽  
Self Bias ◽  
Number Of Cycles ◽  
Etched Surface ◽  
Gan Etching ◽  
Atomic Layer Etching

This paper reports on the use of low-damage atomic layer etching (ALE) performed using O2 and BCl3 plasma for etching (Al)GaN. The proposed ALE process led to excellent self-limiting etch characteristics with a low direct current (DC) self-bias, which resulted in a high linearity between the etching depth and number of cycles. The etching damage was evaluated using several methods, including atomic force microscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy, and the I–V properties of the recessed Schottky diodes were compared with those of digital etching performed using O2 plasma and HCl solution. The electrical characteristics of the recessed Schottky diode fabricated using the proposed ALE process were superior to those of the diodes fabricated using the conventional digital etching process. Moreover, the ALE process yielded a higher PL intensity and N/(Al + Ga) ratio of the etched AlGaN surface, along with a smoother etched surface.

Sem Observations in Gastric Mucosa Exposed to Progressive Enzymatic Etching

1980 ◽  
Vol 38 ◽  
pp. 570-571
Author(s):  
C.A.E. Lemmi ◽  
D. Booth ◽  
G.E. Adomian
Keyword(s):  
Gastric Mucosa ◽  
Critical Point ◽  
Proteolytic Activity ◽  
Etching Process ◽  
Cellular Types

In order to enrich populations of homogeneous cellular types we dissociated gastric mucosa by enzymatic techniques. In addition, we used SEM to monitor the progressive etching of the mucosa. Two enzymes were tested: collagenase III with minimum proteolytic activity and Pronase with broader proteolytic effects. The gastric mucosa was exposed to the effect of the enzymes using everted stomach preparations. In this way the digestive action occured progressively from the lumen of the stomach toward the base of the glands. This “etching” process could be monitored conveniently by SEM. After incubation for periods varying from 30 to 210 minutes the tissues were stretched on dental wax, fixed in 2 % glutaralheyde, post-fixed in osmium, dehydrated, critical point dryed and coated with gold. A model MSM-5 “Mini-SEM” was used for observation. Gentle uncurling of the preparation before coating with gold produced fractures which revealed the structure of the gastric glandsin more detail.

Erratum: Dry etching process for fabrication of optoelectronic gratings in III-V substrates

1992 ◽  
Vol 28 (3) ◽  
pp. 338
Author(s):  
A.S. Gozdz ◽  
J.A. Shelburne ◽  
R.S. Robinson ◽  
C.C. Chang
Keyword(s):  
Dry Etching ◽  
Etching Process

scholarly journals Low-temperature smoothing method of scalloped DRIE trench by post-dry etching process based on SF6 plasma

2020 ◽  
Vol 8 (1) ◽  
Author(s):  
Jin Soo Park ◽  
Dong-Hyun Kang ◽  
Seung Min Kwak ◽  
Tae Song Kim ◽  
Jung Ho Park ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dry Etching ◽  
Smoothing Method ◽  
Etching Process
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