Body-biasing-based Latch Offset Cancellation Sensing Circuit for Deep Submicrometer STT-MRAM

2021 ◽  
Vol 21 (2) ◽  
pp. 126-133
Author(s):  
Taehui Na
Keyword(s):  
Offset Cancellation ◽  
Body Biasing ◽  
Deep Submicrometer

Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM

2015 ◽  
Vol 62 (7) ◽  
pp. 1776-1784 ◽  
Author(s):  
Byungkyu Song ◽  
Taehui Na ◽  
Jisu Kim ◽  
Jung Pill Kim ◽  
Seung H. Kang ◽  
...  
Keyword(s):  
Offset Cancellation ◽  
Sense Amplifier ◽  
Deep Submicrometer

An Experimental Study on Body-Biasing Layout Style Focusing on Area Efficiency and Speed Controllability

2009 ◽  
Vol E92-C (2) ◽  
pp. 281-285 ◽  
Author(s):  
Koichi HAMAMOTO ◽  
Hiroshi FUKETA ◽  
Masanori HASHIMOTO ◽  
Yukio MITSUYAMA ◽  
Takao ONOYE
Keyword(s):  
Experimental Study ◽  
Area Efficiency ◽  
Body Biasing

scholarly journals Offset Cancellation and Programmable Gain Design for Switched Capacitor Amplifier in Digital DC-DC Converter

2021 ◽  
Vol 714 (4) ◽  
pp. 042053
Author(s):  
Panpan Zhang ◽  
Peng Zhao ◽  
Xiaoping Chen ◽  
Yang Song ◽  
Zongjiang Zhang
Keyword(s):  
Switched Capacitor ◽  
Offset Cancellation ◽  
Programmable Gain

LOOKUP TABLE-BASED ADAPTIVE BODY BIASING OF MULTIPLE MACROS FOR PROCESS VARIATION COMPENSATION AND LOW LEAKAGE

2010 ◽  
Vol 19 (07) ◽  
pp. 1449-1464 ◽  
Author(s):  
BYUNGHEE CHOI ◽  
YOUNGSOO SHIN
Keyword(s):  
Supply Voltage ◽  
Process Variation ◽  
Power Saving ◽  
Lookup Table ◽  
Low Leakage ◽  
Fine Grain ◽  
Body Biasing ◽  
Block Level ◽  
Adaptive Body Bias ◽  
Body Bias

A reduced supply voltage must be accompanied by a reduced threshold voltage, which makes this approach to power saving susceptible to process variation in transistor parameters, as well as resulting in increased subthreshold leakage. While adaptive body biasing is efficient for both compensating process variation and suppressing leakage current, it suffers from a large overhead of control circuit. Most body biasing circuits target an entire chip, which causes excessive leakage of some blocks and misses the chance of fine grain control. We propose a new adaptive body biasing scheme, based on a lookup table for independent control of multiple functional blocks on a chip, which controls leakage and also compensates for process variation at the block level. An adaptive body bias is applied to blocks in active mode and a large reverse body bias is applied to blocks in standby mode. This is achieved by a central body bias controller, which has a low overhead in terms of area, delay, and power consumption. The problem of optimizing the required set of bias voltages is formulated and solved. A design methodology for semicustom design using standard-cell elements is developed and verified with benchmark circuits.

Intrinsic transconductance extraction for deep-submicrometer MOSFETs

1989 ◽  
Vol 36 (1) ◽  
pp. 140-142 ◽  
Author(s):  
J. Chung ◽  
M.-C. Jeng ◽  
G. May ◽  
P.K. Ko ◽  
C. Hu
Keyword(s):  
Deep Submicrometer
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