scholarly journals Bismuth Telluride Solubility Limit and Dopant Effects on the Electronic Properties of Lead Telluride

2019 ◽  
Author(s):  
Dana Ben-Ayoun ◽  
Yaniv Gelbstein
Keyword(s):  
Electronic Properties ◽  
Bismuth Telluride ◽  
Lead Telluride ◽  
Solubility Limit

Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates

2013 ◽  
Vol 13 (8) ◽  
pp. 3365-3373 ◽  
Author(s):  
O. Caha ◽  
A. Dubroka ◽  
J. Humlíček ◽  
V. Holý ◽  
H. Steiner ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Bismuth Telluride ◽  
Topological Insulator ◽  
Growth Structure

Synthesis and Thermoelectric Properties of Compositional-Modulated Lead Telluride–Bismuth Telluride Nanowire Heterostructures

Nano Letters ◽  
2013 ◽  
Vol 13 (5) ◽  
pp. 2058-2063 ◽  
Author(s):  
Haiyu Fang ◽  
Tianli Feng ◽  
Haoran Yang ◽  
Xiulin Ruan ◽  
Yue Wu
Keyword(s):  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Lead Telluride ◽  
Nanowire Heterostructures

Structural and electronic properties of indium-doped YBa2Cu3Oσ

1991 ◽  
Vol 6 (3) ◽  
pp. 446-449 ◽  
Author(s):  
Georg Weidlich ◽  
Michael Goelz ◽  
Ruiping Wang ◽  
William E. Evenson ◽  
John A. Gardner ◽  
...  
Keyword(s):  
Magnetic Flux ◽  
Electronic Properties ◽  
Solubility Limit ◽  
Formula Unit ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electronic Properties ◽  
Oxide Phases ◽  
Diffraction Patterns

We have measured x-ray diffraction patterns and Meissner flux exclusion of YBa2Cu3Oσ containing indium. All samples were synthesized at temperatures near 940 °C, and the data indicate the indium atomic solubility to be approximately 3% per formula unit. At the solubility limit Tc is reduced from 92.7 K to 91.3 K relative to undoped samples, and the total magnetic flux excluded is reduced from approximately 40% to about 10%. For samples of formula InxY1−xBa2Cu3Oσ concentrations of other Y–Ba–Cu oxide phases are low and do not depend systematically on x. These results indicate that indium substitutes predominantly for yttrium when x is small.

Determination of chloride and bromide in lead telluride and bismuth telluride systems

1976 ◽  
Vol 66 (3-4) ◽  
pp. 225-232 ◽  
Author(s):  
L. Zanotti ◽  
F. Licci
Keyword(s):  
Bismuth Telluride ◽  
Lead Telluride

scholarly journals Effect of temperature mismatch on the life cycle of thermoelectric generator efficiency for waste heat recovery

2021 ◽  
Vol 335 ◽  
pp. 03010
Author(s):  
Lim Zi Feng ◽  
Lim Joon Hoong
Keyword(s):  
Life Cycle ◽  
Thermoelectric Material ◽  
Bismuth Telluride ◽  
Silicon Germanium ◽  
Thermal Gradient ◽  
Thermoelectric Generator ◽  
Waste Heat ◽  
Lead Telluride ◽  
Effect Of Temperature ◽  
Cold Side

Global warming due to greenhouse gases that has been produced by energy generator as a byproduct has becoming a serious issue in recent decades. Thermoelectric module is an alternative method that can generate energy from heat and vice versa. The module is denominated as thermoelectric generator (TEG) when it is used to generate electricity via a process called the Seebeck effect. The use of thermoelectric generator has become more and more demanding due to the low maintenance cost and waste heat availability can be found everywhere in daily life such as car exhaust, roof tiles, and etc. The purpose of this research paper was to determine the effect of temperature mismatch on the life cycle of the thermoelectric generator efficiency using ANSYS simulation. The common used materials for the thermoelectric are bismuth telluride, lead telluride and silicon germanium. Each material has different thermal conductivity, Seebeck coefficient and electrical resistivity. The materials are paired together to form a thermocouple and the thermal gradient of the TEG is being evaluate through the simulation. Generally, the greater the temperature between the hot and cold side of the TEG, the higher the power generated. Bismuth telluride has a highest temperature difference between the hot and cold side followed by lead telluride and silicon germanium. The combination of BiTe(N) - BiTe(P) has the lowest minimum heat flux compared to the rest of the thermoelectric material combination. This proves that thermal and electrical properties and combination of thermoelectric material plays a vital role in the thermal gradient of the TEG.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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