scholarly journals IIIrd Generation Solar Cell

2021 ◽  
Author(s):  
Paweł Kwaśnicki

Light harvesting for generation of electric energy is one of the most important research topics in applied sciences. First, for an efficient harvesting one needs a material with a broad light absorption window having a strong overlap with the sunlight spectrum. Second, one needs an efficient conversion of photoexcited carriers into produced current or voltage which can be used for applied purposes. The maximum light conversion coefficient in semiconductor systems is designated by so called Shockley-Queisser law, which is around 32% for an optimal bandgap value of 1,2–1,3 eV. However the efficiency may be increased using a solutions based on semiconductor nano materials such as quantum dots. Solar cells based on such a structures are included in the group of 3rd generation solar sell. 3rd generation solar cell encompasses multiple materials as a base of cell, such as: perovskite, organic, polymers and biomimetics. The most promising and in the same time most discussed are quantum dots and perovskite. Both material has a potential to revolutionize the solar cell industry due to their wide absorption range and high conversion coefficient. Nonetheless before the most common used material in photovoltaic namely silicon is replace one must overcome few major issues such as: stability and lifetime for at least 5 to 10 years or more, manufacturing process for a large surfaces and low production cost as well as recycling after the time of optimal use.


2020 ◽  
Vol 175 ◽  
pp. 108118 ◽  
Author(s):  
Farhad Jahantigh ◽  
S.M. Bagher Ghorashi ◽  
Amir Bayat




2012 ◽  
Vol 22 (21) ◽  
pp. 10525 ◽  
Author(s):  
Ting Shu ◽  
Ziming Zhou ◽  
Heng Wang ◽  
Guanghui Liu ◽  
Peng Xiang ◽  
...  


2014 ◽  
Vol 6 (1) ◽  
pp. 011206 ◽  
Author(s):  
Tomah Sogabe ◽  
Toshiyuki Kaizu ◽  
Yoshitaka Okada ◽  
Stanko Tomić


2014 ◽  
Vol 256 ◽  
pp. 102-109 ◽  
Author(s):  
Mohammad Reza Golobostanfard ◽  
Hossein Abdizadeh


2012 ◽  
Vol 05 (02) ◽  
pp. 1260004 ◽  
Author(s):  
GENTIAN YUE ◽  
JIHUAI WU ◽  
YUNFANG HUANG ◽  
YAOMING XIAOMING XIAO ◽  
ZHANG LAN

An iodine/iodide-free and polymer heterojunction-sensitized hybrid solar cell is fabricated by using 6,6-phenyl- C61 -butyric acid methyl ester (PCBM) as electronic acceptor, poly(3-hexylthiophene) (P3HT) as donor and TiO2 film as substrate. The PCBM–P3HT heterojunction can harvest ultraviolet-visible light, transport charge carriers, replacing the dyes and electrolytes in dye-sensitized solar cell. The cell with a PCBM/P3HT ratio of 1:2 shows a short circuit current of 5.47 mA⋅cm-2, an open circuit voltage of 0.849 V, a fill factor of 0.640 and a light-to-electric energy conversion efficiency of 2.97% under a simulated solar light irradiation of 100 mW⋅cm-2.



2013 ◽  
Vol 1551 ◽  
pp. 137-142
Author(s):  
Neil S. Beattie ◽  
Guillaume Zoppi ◽  
Ian Farrer ◽  
Patrick See ◽  
Robert W. Miles ◽  
...  

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.



2020 ◽  
Vol 835 ◽  
pp. 155268 ◽  
Author(s):  
Chao Geng ◽  
Yudong Shang ◽  
JiaJia Qiu ◽  
Qidi Wang ◽  
Xiuhua Chen ◽  
...  


RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16693-16699 ◽  
Author(s):  
Ajith Thomas ◽  
R. Vinayakan ◽  
V. V. Ison

An inverted bulk-heterojunction hybrid solar cell with the structure ITO/ZnO/P3HT:PbS/Au was prepared. The device performance was enhanced by inserting an interface buffer layer of CdSe quantum dots between the ZnO and the P3HT:PbS BHJ active layer.



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