scholarly journals CURRENT DISTRIBUTION DEPENDENCE ON ELECTRIC FIELD IN HELICALLY COILED CARBON NANOTUBES

2017 ◽  
Vol 8 (2) ◽  
Author(s):  
Zoran P. Popović ◽  
Tatjana Vuković ◽  
Božidar Nikolić ◽  
Milan Damnjanović ◽  
Ivanka Milošević

Experimentally is confirmed that helically coiled carbon nanotube (HCCNT) could be used as a small solenoid for generating spatially localized magnetic field. Current distribution during diffusive electronic transport likewise the inductivity of this quantum conductor depends on electric field. Despite slightly lower electron mobility in HCCNTs than that of the straight single wall carbon nanotubes, the coiled nanotubes are attractive for application as nonlinear nano-solenoids. Nonequilibrium electron distribution functions obtained by solving Boltzmann transport equation are used to predict average helical radius of current flow as a function of electric field intensity. Change of spatial distribution of electronic flow with applied electric field is considered and nonlinear inductivity of HCCNT is predicted.

2005 ◽  
Author(s):  
Sumanth Banda ◽  
Zoubeida Ounaies ◽  
Tyler St Clair ◽  
Jared Rud ◽  
Kristin Burney ◽  
...  

2016 ◽  
Vol 7 (2) ◽  
Author(s):  
Zoran P. Popović ◽  
Tatjana Vuković ◽  
Božidar Nikolić ◽  
Milan Damnjanović ◽  
Ivanka Milošević

We studied electron transport in single wall carbon nanotubes placed in stationary homogeneous electric fields, oriented along tubes. Electron distributions for various electric fields are determined by solving stationary multi bands Boltzmann transport equation in presence of electron phonon scattering mechanisms. Contributions of all possible scattering channels, allowed by selection rules and energy conservation, are taken into account for finding scattering rate and collision integrals. As it is previously predicted, large electron drift velocities in straight single wall carbon nanotubes are obtained. Frequent electron scattering as well as low group velocity have strong impact on reduction of drift velocity in helically coiled carbon nanotubes.


2018 ◽  
Vol 5 (3) ◽  
pp. 14-34
Author(s):  
G. Ijeomah ◽  
F. Samsuri ◽  
F. Obite ◽  
M.A. Zawawi

Experimental projection of transport properties of semiconductor devices faces a challenge nowadays. As devices scale to nanometre scale range, the classical transport equations used in current device simulators can no longer be applied. Conversely, the use of a more accurate and better non-equilibrium green function (NEGF) is limited by the fact that it requires excessive quantum of memory and computational time, having quasi-separable matrices that are extremely convoluted to solve. This work exploits the Boltzmann Transport Equation (BTE) to assess the transport properties of carbon nanotubes. Previous works on solving the BTE have employed either a stochastic method or an approximate method, both of which do not possess the necessary properties for practical device applications. Therefore, this work represents the first direct theoretical solution of the BTE for one-dimensional carbon nanotubes that can be utilized for practical device applications. The complete spectrum of transport in CNTs extending from ohmic to high-field through ballistic transmission is examined to delineate plethora of transport properties. The transport for arbitrary values of the electric field is based on the BTE applied to experimental data on CNTs. In the limit of low field, the mobility expressions are obtained in terms of the mean free path (mfp) that is distinctly shorter than the length of the sample. The ohmic resistance is quantized a value of 6.453k-ohms consistent with experimental findings with transmission approaching unity as channel length shrinks below the carrier mfp. The emission of a quantum was observed to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic domain was found to occur when the channel length is scaled below the ballistic limit that is shown to be the extended version of the long-channel mfp modulated by injections from the contacts, yet the mobility degrades. The mobility degradation is shown to be the cause of resistance quantum in the low-channel length limit. These findings are important in predicting the transport properties of low-dimensional CNTs.


2007 ◽  
Vol 1017 ◽  
Author(s):  
M. Zahed Kauser ◽  
P. Paul Ruden

AbstractWe report on the effects of chirality and diameter on the electron transport properties in individual semiconducting, single wall carbon nanotubes. The Boltzmann transport equation is solved indirectly by the Ensemble Monte Carlo method and directly by Rode's iterative technique. Results show considerable effects of chirality and group on band structure and transport properties of tubes with small diameters. However the effects of chirality and group become negligible for tubes with large diameters. Diameter affects these properties more strongly than either chirality or group.


2002 ◽  
Vol 761 ◽  
Author(s):  
Paul Jaynes ◽  
Thomas Tiano ◽  
Margaret Roylance ◽  
Charles Carey ◽  
Kenneth McElrath

ABSTRACTSingle wall carbon nanotubes have aroused a great deal of interest because of their unique combination of electrical, physical and mechanical properties. However, the widespread use of SWNTs in composites and electronic devices is limited because of the difficulty of dispersing and processing these materials. This paper describes a method for depositing and aligning SWNTs from a dispersed solution onto a substrate under the influence of an electric field. Results indicate that SWNTs can be aligned in bulk in the direction of electric field lines, and that individual SWNT ropes may be deposited between two electrodes. The extent and type of deposition depends upon the electrode geometry and processing time. Electrical alignment of SWNTs is an enabling technology allowing manipulation of nanomaterials using standard processing. It could eventually lead to a wide range of products, such as nanocomposites with aligned fillers and nanoelectronic devices.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Yijiang Lu ◽  
Jing Li ◽  
Haiping Hong

The resistance of several pristine and functional single-wall carbon nanotubes (SWNTs) deposited and dried on interdigitated electrode (IDE) chips was investigated to better understand how functional groups influence their resistivity. Without the external electrical field, the resistance was generally increased for the sulfonated and fluorinated SWNTs but not for COOH-SWNTs. With a 3 V electric field applied during depositing, while no change in resistance was found for the purified pristine SWNTs, fluorinated SWNTs, COOH SWNTs, and Ni-SWNTs, a significant decrease in resistance was observed in sulfonated SWNTs and unpurified pristine SWNTs, which could be due to the alignment of SWNTs in an electric field. The alignment of the sulfonated SWNTs is most likely due to the charge of the sulfate functional group. It is interesting to note that the alignment was found in the unpurified pristine SWNTs but not in the purified pristine ones which have lessened resistivity. The lower resistivity in the purified pristine SWNTs may be due to the smaller number (<5%) of impurities. The significance of this research is that hydrophilic COOH-SWNTs could be a better candidate than the hydrophobic pristine SWNTs for being used in many applications, especially in polymer nanocomposites.


2005 ◽  
Vol 901 ◽  
Author(s):  
Xugang Xiong ◽  
Prashanth Makaram ◽  
Kaveh Bakhtari ◽  
Sivasubramanian Somu ◽  
Ahmed Busnaina ◽  
...  

AbstractDirected assembly of nanoparticles and single wall carbon nanotubes (SWNTs) using electrostatically addressable templates has been demonstrated. Nanoparticles down to 50 nm are assembled on the Au micro and nanowires of the templates in a DC and AC electric fields. The nanoparticles can be assembled in monolayers and thicker layers. Single wall carbon nanotubes (SWNTs) are also assembled without alignment on Au wires using the nanotemplate. As the size of the template wires is reduced to nanoscale dimensions, an AC electric field proves to be more effective for nanoparticle assembly than a DC electric field.


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