4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR) for Low Forward Voltage drop

We present our recent developments in 4H-SiC power DMOSFETs. 4H-SiC DMOSFETs with a room temperature specific on-resistance of 3.7 mΩ-cm2 with a gate bias of 20 V, and an avalanche voltage of 1550 V with gate shorted to source, was demonstrated. A threshold voltage of 3.5 V was extracted from the power DMOSFET, and a subthreshold swing of 200 mV/dec was measured. The device was successfully scaled to an active area of 0.4 cm2, and the resulting device showed a drain current of 377 A at a forward voltage drop of 3.8 V at 25oC.

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Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes

ECS Transactions ◽

10.1149/06407.0223ecst ◽

2014 ◽

Vol 64 (7) ◽

pp. 223-236 ◽

Cited By ~ 2

Author(s):

T. Gachovska ◽

J. L. Hudgins

Keyword(s):

High Voltage ◽

Voltage Drop ◽

Forward Voltage ◽

Forward Voltage Drop

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10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.1025 ◽

2010 ◽

Vol 645-648 ◽

pp. 1025-1028 ◽

Cited By ~ 7

Author(s):

Qing Chun Jon Zhang ◽

Robert Callanan ◽

Anant K. Agarwal ◽

Albert A. Burk ◽

Michael J. O'Loughlin ◽

...

Keyword(s):

Breakdown Voltage ◽

Voltage Drop ◽

Current Gain ◽

Bipolar Junction Transistors ◽

Collector Current ◽

Forward Voltage ◽

Collector Voltage ◽

Forward Voltage Drop ◽

Chip Size ◽

Dc Current

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

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10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Energies ◽

10.3390/en12234566 ◽

2019 ◽

Vol 12 (23) ◽

pp. 4566 ◽

Cited By ~ 2

Author(s):

Asllani ◽

Morel ◽

Phung ◽

Planson

Keyword(s):

Silicon Carbide ◽

Leakage Current ◽

Voltage Drop ◽

Forward Bias ◽

Forward Voltage ◽

Pin Diodes ◽

Pulse Switching ◽

Turn On ◽

Forward Voltage Drop ◽

Fabrication And Characterization

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

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Electron irradiation for adjusting the reverse recovery time and forward voltage drop characteristics of fast diodes

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(97)00985-3 ◽

1998 ◽

Vol 139 (1-4) ◽

pp. 502-505 ◽

Cited By ~ 1

Author(s):

Elena Iliescu ◽

Anastase Niculescu ◽

Viorel Banu ◽

Anca Nichita ◽

Nicoleta Sturzu

Keyword(s):

Electron Irradiation ◽

Recovery Time ◽

Voltage Drop ◽

Forward Voltage ◽

Forward Voltage Drop ◽

Reverse Recovery Time

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Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films

MRS Proceedings ◽

10.1557/proc-815-j5.25 ◽

2004 ◽

Vol 815 ◽

Cited By ~ 1

Author(s):

S.M. Bishop ◽

E.A. Preble ◽

C. Hallin ◽

A. Henry ◽

W. Sarney ◽

...

Keyword(s):

Voltage Drop ◽

Stacking Faults ◽

Separation Distance ◽

Full Width ◽

Forward Voltage ◽

Hydrogen Etching ◽

X Ray ◽

Transmission Electron ◽

Forward Voltage Drop ◽

Film Substrate

AbstractHomoepitaxial films of 4H-SiC(1120) and 8° off-axis 4H-SiC(0001) have been grown and characterized. The number of domains and the range of full-width half-maxima values of the x-ray rocking curves of the [1120]-oriented wafers were smaller than the analogous values acquired from the (0001) materials. Hydrogen etching of the former surface for 5 and 30 minutes reduced the RMS roughness from 0.52 nm to 0.48 nm and to 0.28 nm, respectively; the RMS roughness for a 30 μm (1120) film was 0.52 nm. Micropipes in the substrates did not thread beyond the film-substrate interface. The separation distance between stacking faults was determined to be 10 μm by transmission electron microscopy. Hall mobilities and carrier concentrations of 12,200 cm2/Vs and 3.1×1014 cm−3 and 800 cm2/Vs and 7.4×1014 cm−3 were measured at 100°K and 300°K, respectively. Photoluminescence indicated high purity. 4H-SiC(1120) PiN devices exhibited average blocking voltages to 1344 V and a minimum average forward voltage drop of 3.94 V.

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