Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes

2014 ◽  
Vol 64 (7) ◽  
pp. 223-236 ◽  
Author(s):  
T. Gachovska ◽  
J. L. Hudgins
Keyword(s):  
High Voltage ◽  
Voltage Drop ◽  
Forward Voltage ◽  
Forward Voltage Drop

scholarly journals Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model

2020 ◽  
Vol 1004 ◽  
pp. 911-916 ◽  
Author(s):  
Daniel Johannesson ◽  
Keijo Jacobs ◽  
Staffan Norrga ◽  
Anders Hallén ◽  
Muhammad Nawaz ◽  
...  
Keyword(s):  
High Voltage ◽  
High Power ◽  
Voltage Drop ◽  
Forward Voltage ◽  
Blocking Voltage ◽  
Wide Range ◽  
Forward Voltage Drop ◽  
Static Performance ◽  
Simulation Results ◽  
Ultra High Voltage

In this paper, a technology computer-aided design (TCAD) model of a silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) has been calibrated against previously reported experimental data. The calibrated TCAD model has been used to predict the static performance of theoretical SiC IGBTs with ultra-high blocking voltage capabilities in the range of 20-50 kV. The simulation results of transfer characteristics, IC-VGE, forward characteristics, IC-VCE, and blocking voltage characteristics are studied. The threshold voltage is approximately 5 V, and the forward voltage drop is ranging from VF = 4.2-10.0 V at IC = 20 A, using a charge carrier lifetime of τA = 20 μs. Furthermore, the forward voltage drop impact for different process dependent parameters (i.e., carrier lifetimes, mobility/scattering and trap related defects) and junction temperature are investigated in a parametric sensitivity analysis. The wide-range simulation results may be used as an input to facilitate high power converter design and evaluation. In this case, the TCAD simulated static characteristics of SiC IGBTs is compared to silicon (Si) IGBTs in a modular multilevel converter in a general high-power application. The results indicate several benefits and lower conduction energy losses using ultra-high voltage SiC IGBTs compared to Si IGBTs.

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

2014 ◽  
Vol 778-780 ◽  
pp. 855-858 ◽  
Author(s):  
Dai Okamoto ◽  
Yasunori Tanaka ◽  
Tomonori Mizushima ◽  
Mitsuru Yoshikawa ◽  
Hiroyuki Fujisawa ◽  
...  
Keyword(s):  
Power System ◽  
High Voltage ◽  
Light Emission ◽  
Voltage Drop ◽  
High Current ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Current Switching ◽  
Forward Voltage Drop

We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that exceeded 13 kV, a forward voltage drop of 4.9–5.3 V, and an on-resistance (RonAactive) of 12 mW·cm2. The blocking yield at 10 kV on a 3-in wafer exceeded 90%. We investigated failed devices using Candela defect maps and light-emission images and found that a few devices failed because of large defects on the chip. We also demonstrated that the fabricated diodes can be used in conducting high-voltage and high-current switching tests.

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

2014 ◽  
Vol 778-780 ◽  
pp. 1038-1041 ◽  
Author(s):  
Tadayoshi Deguchi ◽  
Shuji Katakami ◽  
Hiroyuki Fujisawa ◽  
Kensuke Takenaka ◽  
Hitoshi Ishimori ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Voltage ◽  
Room Temperature ◽  
Voltage Drop ◽  
Temperature Stability ◽  
Bipolar Transistors ◽  
Forward Voltage ◽  
Current Spreading ◽  
Blocking Voltage ◽  
Forward Voltage Drop

High-voltage SiC p-channel insulated-gate bipolar transistors (p-IGBT) utilizing current-spreading layer (CSL) formed by ion implantation are fabricated and their properties characterized. A high blocking voltage of 15 kV is achieved at room temperature by optimizing the JFET length. An ampere-class p-IGBT exhibited a low forward voltage drop of 8.5 V at 100 A/cm2 and a low differential specific on-resistance of 33 mΩ cm2 at 250 °C, while these values were high at room temperature. For further reduction of the forward voltage drop in the on-state and temperature stability, the temperature dependence of the JFET effect and carrier lifetime in p-IGBTs are investigated. Optimization of the JFET length using an epitaxial CSL, instead of applying ion implantation and lifetime enhancement, could lead to a further reduction of the forward voltage drop.

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

2018 ◽  
Vol 924 ◽  
pp. 568-572 ◽  
Author(s):  
Arash Salemi ◽  
Hossein Elahipanah ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Voltage Drop ◽  
Device Simulation ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Forward Voltage Drop ◽  
Ultra High Voltage

Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

2015 ◽  
Vol 54 (12) ◽  
pp. 121301 ◽  
Author(s):  
Doohyung Cho ◽  
Seulgi Sim ◽  
Kunsik Park ◽  
Jongil Won ◽  
Sanggi Kim ◽  
...  
Keyword(s):  
High Voltage ◽  
Voltage Drop ◽  
Forward Voltage ◽  
Forward Voltage Drop ◽  
Schottky Rectifier

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

2014 ◽  
Vol 778-780 ◽  
pp. 135-138 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Shi Yang Ji ◽  
Kazutoshi Kojima ◽  
Yuuki Ishida ◽  
Koji Nakayama ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Voltage ◽  
Growth Process ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Voltage Drop ◽  
Minority Carrier Lifetime ◽  
Forward Voltage ◽  
Forward Voltage Drop ◽  
Very High

The epitaxial growth of thick multi-layer 4H-SiC to fabricate very high-voltage C-face n-channel IGBTs is demonstrated using 3-inch diameter wafers. We employ an inverted-growth process, which enables the on-state voltage of resultant IGBTs to be reduced. Furthermore a long minority carrier lifetime (> 10 μs) and a low-resistance p+epilayer can reduce the forward voltage drop of the IGBTs. The small forward voltage drop is demonstrated particularly at high temperatures by fabricating and characterizing simple pin diodes using the epi-wafer.

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

2012 ◽  
Vol 717-720 ◽  
pp. 1059-1064 ◽  
Author(s):  
Sei Hyung Ryu ◽  
Lin Cheng ◽  
Sarit Dhar ◽  
Craig Capell ◽  
Charlotte Jonas ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Voltage Drop ◽  
Drain Current ◽  
Subthreshold Swing ◽  
Active Area ◽  
Gate Bias ◽  
Forward Voltage ◽  
Recent Developments ◽  
Forward Voltage Drop

We present our recent developments in 4H-SiC power DMOSFETs. 4H-SiC DMOSFETs with a room temperature specific on-resistance of 3.7 mΩ-cm2 with a gate bias of 20 V, and an avalanche voltage of 1550 V with gate shorted to source, was demonstrated. A threshold voltage of 3.5 V was extracted from the power DMOSFET, and a subthreshold swing of 200 mV/dec was measured. The device was successfully scaled to an active area of 0.4 cm2, and the resulting device showed a drain current of 377 A at a forward voltage drop of 3.8 V at 25oC.

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 1025-1028 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Robert Callanan ◽  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Voltage Drop ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Forward Voltage ◽  
Collector Voltage ◽  
Forward Voltage Drop ◽  
Chip Size ◽  
Dc Current

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

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