Characteristic of hybrid single electron transistor and metal oxide semiconductor structure in Chua’s circuit

Acta Physica Sinica ◽

10.7498/aps.59.8420 ◽

2010 ◽

Vol 59 (12) ◽

pp. 8420

Author(s):

Feng Chao-Wen ◽

Cai Li ◽

Zhang Li-Sen ◽

Yang Xiao-Kuo ◽

Zhao Xiao-Hui

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

Chua’S Circuit ◽

Chua's Circuit ◽

Metal Oxide Semiconductor Structure

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Implementation of multi-scroll Chua’s circuit by hybrid single electron transistor and metal oxide semiconductor structure

Acta Physica Sinica ◽

10.7498/aps.59.8426 ◽

2010 ◽

Vol 59 (12) ◽

pp. 8426

Author(s):

Feng Chao-Wen ◽

Cai Li ◽

Zhang Li-Sen ◽

Yang Xiao-Kuo ◽

Zhao Xiao-Hui

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

Chua’S Circuit ◽

Chua's Circuit ◽

Metal Oxide Semiconductor Structure

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Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

Physical Review B ◽

10.1103/physrevb.80.153310 ◽

2009 ◽

Vol 80 (15) ◽

Author(s):

L. Sun ◽

B. E. Kane

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Charge ◽

Single Electron Transistors ◽

Electron Transistors ◽

Charge Defect ◽

Metal Oxide Semiconductor Structure

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Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation

AIP Advances ◽

10.1063/5.0048080 ◽

2021 ◽

Vol 11 (6) ◽

pp. 065304

Author(s):

Man Ding ◽

Xin Liu

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Gamma Ray ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Damage Effect ◽

Gamma Ray Irradiation ◽

Metal Oxide Semiconductor Structure

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Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589739 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2836 ◽

Author(s):

T. Köster

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

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Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Solid-State Electronics ◽

10.1016/j.sse.2016.04.007 ◽

2016 ◽

Vol 122 ◽

pp. 56-63 ◽

Author(s):

S. Toumi ◽

Z. Ouennoughi ◽

K.C. Strenger ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Optimization Method ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Nordheim Tunneling ◽

Metal Oxide Semiconductor Structure

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Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

Surface and Interface Analysis ◽

10.1002/sia.3154 ◽

2010 ◽

Vol 42 (2) ◽

pp. 70-76 ◽

Author(s):

M. Yoshitake ◽

K. Ohmori ◽

T. Chikyow

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

X Ray ◽

Interface Characterization ◽

Metal Oxide Semiconductor Structure

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Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure

Applied Physics Letters ◽

10.1063/1.2434172 ◽

2007 ◽

Vol 90 (4) ◽

pp. 042104 ◽

Author(s):

W. E. Jellett ◽

K. J. Weber

Keyword(s):

Metal Oxide ◽

Surface Recombination ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Silicon Surfaces ◽

Oxide Semiconductor ◽

Simple Metal ◽

Simple Metal Oxide ◽

Metal Oxide Semiconductor Structure

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Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.458 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 458-463 ◽

Author(s):

Kuang-Ting Liu ◽

Akira Fujiwara ◽

Yasuo Takahashi ◽

Katsumi Murase ◽

Yoshiji Horikoshi

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

Resistive Load ◽

Voltage Gain ◽

Analysis Of Performance ◽

Semiconductor Type

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A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2566 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2566-2568 ◽

Author(s):

Hiroshi Inokawa ◽

Akira Fujiwara ◽

Yasuo Takahashi

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistor

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Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure

Applied Physics Letters ◽

10.1063/5.0058646 ◽

2021 ◽

Vol 119 (7) ◽

pp. 073504

Author(s):

Meiyong Liao ◽

Liwen Sang ◽

Huanying Sun ◽

Tiefu Li ◽

Satoshi Koizumi

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Electromechanical Transducer ◽

Highly Efficient ◽

Metal Oxide Semiconductor Structure

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