Analytical Subthreshold Current and Subthreshold Swing Models for a Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFET with Back-Gate Control

2017 ◽  
Vol 46 (8) ◽  
pp. 5046-5056
Author(s):  
Gopi Krishna Saramekala ◽  
Pramod Kumar Tiwari
Keyword(s):  
Subthreshold Swing ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Subthreshold Current ◽  
Gate Control

Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control

2017 ◽  
Vol 9 (01) ◽  
pp. 67-72
Author(s):  
Sarvesh Dubey ◽  
Rahul Mishra
Keyword(s):  
Analytical Modeling ◽  
Threshold Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Simulation Data ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Channel Effects ◽  
Gate Control

The present paper deals with the analytical modeling of subthreshold characteristics of short-channel fully-depleted recessed-source/drain SOI MOSFET with back-gate control. The variations in the subthreshold current and subthreshold swing have been analyzed against the back-gate bias voltage, buried-oxide (BOX) thickness and recessed source/drain thickness to assess the severity of short-channel effects in the device. The model results are validated by simulation data obtained from two-dimensional device simulator ATLAS from Silvaco.

Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs

2014 ◽  
Vol 13 (2) ◽  
pp. 467-476 ◽  
Author(s):  
Gopi Krishna Saramekala ◽  
Abirmoya Santra ◽  
Mirgender Kumar ◽  
Sarvesh Dubey ◽  
Satyabrata Jit ◽  
...  
Keyword(s):  
Subthreshold Swing ◽  
Metal Gate ◽  
Short Channel ◽  
Fully Depleted ◽  
Subthreshold Current ◽  
Dual Metal

Reduction in threshold voltage fluctuation in fully-depleted SOI MOSFETs with back gate control

2004 ◽  
Vol 48 (6) ◽  
pp. 979-984 ◽  
Author(s):  
Toshinori Numata ◽  
Mitsuhiro Noguchi ◽  
Shin-ichi Takagi
Keyword(s):  
Threshold Voltage ◽  
Voltage Fluctuation ◽  
Back Gate ◽  
Fully Depleted ◽  
Gate Control

An Analytical Model for the Subthreshold Current of Fully Depleted Strained-SOI MOSFET

2011 ◽  
Vol 110-116 ◽  
pp. 3332-3337
Author(s):  
Shan Shan Qin ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Xiao Bo Xu ◽  
Xiao Yan Wang
Keyword(s):  
Diffusion Theory ◽  
Current Model ◽  
Theory Model ◽  
Model Verification ◽  
Drift Diffusion ◽  
Strained Si ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Subthreshold Current ◽  
Good Agreement

A subthreshold current model for fully depleted strained Si on insulator (FD SSOI) MOSFET is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using device simulator ISE. Good agreement is obtained between the model’s calculations and the simulated results. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

Sign in / Sign up

Export Citation Format

Share Document