1900 V, 1.6 mΩ cm2AlN/GaN-on-Si power devices realized by local substrate removal

Applied Physics Express ◽

10.7567/apex.7.034103 ◽

2014 ◽

Vol 7 (3) ◽

pp. 034103 ◽

Author(s):

Nicolas Herbecq ◽

Isabelle Roch-Jeune ◽

Nathalie Rolland ◽

Domenica Visalli ◽

Joff Derluyn ◽

...

Keyword(s):

Power Devices ◽

Substrate Removal ◽

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GaN-on-Si: A scalable material system to realize cost effective next-generation solid state lighting and power devices

2010 Symposium on VLSI Technology ◽

10.1109/vlsit.2010.5556207 ◽

2010 ◽

Author(s):

S. Decoutere ◽

H. Osman ◽

J. Dekoster ◽

B. Dutta ◽

S. Biesemans

Keyword(s):

Solid State ◽

Cost Effective ◽

Solid State Lighting ◽

Material System ◽

Next Generation ◽

Power Devices ◽

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Enhancing dynamic performance of GaN-on-Si power devices with on-chip photon pumping

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2016.7998839 ◽

2016 ◽

Author(s):

Baikui Li ◽

Xi Tang ◽

Jiannong Wang ◽

Kevin J. Chen

Keyword(s):

Dynamic Performance ◽

Power Devices ◽

On Chip ◽

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6 inch GaN on Si power devices for wireless charged health care system applications

2015 IEEE MTT-S 2015 International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications (IMWS-BIO) ◽

10.1109/imws-bio.2015.7303820 ◽

2015 ◽

Author(s):

H. C. Chiu ◽

H. L. Kao ◽

K. S. Chin ◽

F.H. Huang

Keyword(s):

Health Care ◽

Health Care System ◽

Power Devices ◽

Gan On Si ◽

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Interface engineering and bulk trap investigations in GaN-on-Si lateral heterojunction power devices

10.14711/thesis-b1333710 ◽

2014 ◽

Author(s):

Shu Yang

Keyword(s):

Interface Engineering ◽

Power Devices ◽

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High Performance GaN-on-Si Power Devices with Ultralow Specific On-resistance Using Novel Strain Method Fabricated on 200 mm CMOS-Compatible Process Platform

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757694 ◽

2019 ◽

Author(s):

Roy K.-Y. Wong ◽

H. C. Chiu ◽

J. H. Zhang ◽

C. Zhou ◽

Thomas Zhao ◽

...

Keyword(s):

High Performance ◽

Power Devices ◽

Cmos Compatible ◽

Gan On Si ◽

Process Platform ◽

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An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2014.6856054 ◽

2014 ◽

Author(s):

P. Moens ◽

C. Liu ◽

A. Banerjee ◽

P. Vanmeerbeek ◽

P. Coppens ◽

...

Keyword(s):

Gate Dielectric ◽

Industrial Process ◽

Power Devices ◽

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Gan-on-Si process defect detection and analysis for HB-LEDs and power devices

ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference ◽

10.1109/asmc.2013.6552762 ◽

2013 ◽

Author(s):

Sandip Halder ◽

Karen Stiers ◽

Prem Kumar Kandaswamy ◽

Haris Osman ◽

Erik Rosseel ◽

...

Keyword(s):

Defect Detection ◽

Power Devices ◽

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ESD Robustness of GaN-on-Si Power Devices under Substrate Biases by means of TLP/VFTLP Tests

2020 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps45951.2020.9129538 ◽

2020 ◽

Author(s):

Wen Yang ◽

Nicholas Stoll ◽

Jiann-Shiun Yuan

Keyword(s):

Power Devices ◽

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GaN-on-Si lateral power devices with symmetric vertical leakage: The impact of floating substrate

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393612 ◽

2018 ◽

Author(s):

Hanyuan Zhang ◽

Shu Yang ◽

Kuang Sheng

Keyword(s):

Power Devices ◽

Vertical Leakage ◽

Gan On Si ◽

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Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

IEEE Electron Device Letters ◽

10.1109/led.2017.2707529 ◽

2017 ◽

Vol 38 (7) ◽

pp. 937-940 ◽

Author(s):

Gaofei Tang ◽

Jin Wei ◽

Zhaofu Zhang ◽

Xi Tang ◽

Mengyuan Hua ◽

...

Keyword(s):

Power Devices ◽

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