High Performance GaN-on-Si Power Devices with Ultralow Specific On-resistance Using Novel Strain Method Fabricated on 200 mm CMOS-Compatible Process Platform

2019 ◽  
Author(s):  
Roy K.-Y. Wong ◽  
H. C. Chiu ◽  
J. H. Zhang ◽  
C. Zhou ◽  
Thomas Zhao ◽  
...  
Keyword(s):  
High Performance ◽  
Power Devices ◽  
Cmos Compatible ◽  
Gan On Si ◽  
Process Platform ◽  
Strain Method

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

2018 ◽  
Vol 65 (1) ◽  
pp. 207-214 ◽  
Author(s):  
Sen Huang ◽  
Xinyu Liu ◽  
Xinhua Wang ◽  
Xuanwu Kang ◽  
Jinhan Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Power Devices ◽  
Gan On Si ◽  
Gan Heterostructure

GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs

2020 ◽  
pp. 1-4
Author(s):  
Hanlin Xie ◽  
Zhihong Liu ◽  
Wenrui Hu ◽  
Zheng Zhong ◽  
Kenneth Lee ◽  
...  
Keyword(s):  
Low Power ◽  
Power Amplifiers ◽  
Cmos Compatible ◽  
Gan On Si

4H-SIC Dmosfets for High Frequency Power Switching Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Anant K. Agarwal ◽  
James Richmond ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
High Speed ◽  
High Performance ◽  
High Frequency Power ◽  
Power Devices ◽  
Power Switching ◽  
High Speed Switching ◽  
Unipolar Devices ◽  
Very High ◽  
Frequency Power

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

scholarly journals Transformerless Quasi-Z-Source Inverter to Reduce Leakage Current for Single-Phase Grid-Tied Applications

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 312 ◽  
Author(s):  
Woo-Young Choi ◽  
Min-Kwon Yang
Keyword(s):  
Leakage Current ◽  
Power Efficiency ◽  
High Performance ◽  
Single Phase ◽  
Power Devices ◽  
Common Mode Voltage ◽  
Control Scheme ◽  
Frequency Components ◽  
The Common ◽  
Current Reduction

The conventional single-phase quasi-Z-source (QZS) inverter has a high leakage current as it is connected to the grid. To address this problem, this paper proposes a transformerless QZS inverter, which can reduce the leakage current for single-phase grid-tied applications. The proposed inverter effectively alleviates the leakage current problem by removing high-frequency components for the common-mode voltage. The operation principle of the proposed inverter is described together with its control strategy. A control scheme is presented for regulating the DC-link voltage and the grid current. A 1.0 kW prototype inverter was designed and tested to verify the performance of the proposed inverter. Silicon carbide (SiC) power devices were applied to the proposed inverter to increase the power efficiency. The experimental results showed that the proposed inverter achieved high performance for leakage current reduction and power efficiency improvement.

CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V

2020 ◽  
Vol 13 (2) ◽  
pp. 026503 ◽  
Author(s):  
Hanlin Xie ◽  
Zhihong Liu ◽  
Yu Gao ◽  
Kumud Ranjan ◽  
Kenneth E. Lee ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Cmos Compatible ◽  
Gan On Si
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