Relationship between microstructure and electronic properties of energetically deposited zinc tin oxide

2016 ◽  
Vol 9 (6) ◽  
pp. 065501 ◽  
Author(s):  
Billy James Murdoch ◽  
Dougal G. McCulloch ◽  
James G. Partridge
Keyword(s):  
Electronic Properties ◽  
Tin Oxide ◽  
Zinc Tin Oxide

Electronic properties of amorphous zinc tin oxide films by junction capacitance methods

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2801-2804 ◽  
Author(s):  
Peter T. Erslev ◽  
Hai Q. Chiang ◽  
David Hong ◽  
John F. Wager ◽  
J. David Cohen
Keyword(s):  
Electronic Properties ◽  
Tin Oxide ◽  
Oxide Films ◽  
Junction Capacitance ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films

scholarly journals Defect Processes in Halogen Doped SnO2

2021 ◽  
Vol 11 (2) ◽  
pp. 551
Author(s):  
Petros-Panagis Filippatos ◽  
Nikolaos Kelaidis ◽  
Maria Vasilopoulou ◽  
Dimitris Davazoglou ◽  
Alexander Chroneos
Keyword(s):  
Electronic Properties ◽  
Tin Oxide ◽  
Density Functional ◽  
Structural Changes ◽  
High Dielectric Constant ◽  
Density Functional Theory Calculations ◽  
Functional Theory ◽  
Optical And Electronic Properties ◽  
High Dielectric ◽  
Gap States

In the present study, we performed density functional theory calculations (DFT) to investigate structural changes and their impact on the electronic properties in halogen (F, Cl, Br, and I) doped tin oxide (SnO2). We performed calculations for atoms intercalated either at interstitial or substitutional positions and then calculated the electronic structure and the optical properties of the doped SnO2. In all cases, a reduction in the bandgap value was evident, while gap states were also formed. Furthermore, when we insert these dopants in interstitial and substitutional positions, they all constitute a single acceptor and donor, respectively. This can also be seen in the density of states through the formation of gap states just above the valence band or below the conduction band, respectively. These gap states may contribute to significant changes in the optical and electronic properties of SnO2, thus affecting the metal oxide’s suitability for photovoltaics and photocatalytic devices. In particular, we found that iodine (I) doping of SnO2 induces a high dielectric constant while also reducing the oxide’s bandgap, making it more efficient for light-harvesting applications.

Shape Effect of Zinc-Tin Oxide Nanostructures on Photodegradation of Methylene Blue and Rhodamine B under UV and Visible Light

2021 ◽  
Vol 4 (2) ◽  
pp. 1149-1161 ◽  
Author(s):  
Ana Rovisco ◽  
Rita Branquinho ◽  
Jonas Deuermeier ◽  
Tomás Freire ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Visible Light ◽  
Tin Oxide ◽  
Rhodamine B ◽  
Shape Effect ◽  
Oxide Nanostructures ◽  
Zinc Tin Oxide

Er3+/Yb3+ activated up-conversion luminescence of zinc-tin-oxide-based powders

2021 ◽  
Author(s):  
Tamara B. Ivetić ◽  
Yicong Ding ◽  
Miroslav Cvetinov ◽  
Jelena Petrović ◽  
Olivera R. Klisurić ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Zinc Tin Oxide

scholarly journals Violet-light stimulated synaptic and learning functions in a zinc–tin oxide photoelectric transistor for neuromorphic computation

RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 42682-42687
Author(s):  
Ting-Ruei Lin ◽  
Li-Chung Shih ◽  
Po-Jen Cheng ◽  
Kuan-Ting Chen ◽  
Jen-Sue Chen
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Violet Light ◽  
Learning Functions ◽  
Zinc Tin Oxide

Photonic potentiation and electric depression are realized in a ZTO thin film transistor for the application in neuromorphic computation.

scholarly journals X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

2014 ◽  
Vol 104 (24) ◽  
pp. 242113 ◽  
Author(s):  
Sin Cheng Siah ◽  
Sang Woon Lee ◽  
Yun Seog Lee ◽  
Jaeyeong Heo ◽  
Tomohiro Shibata ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Tin Oxide ◽  
Electron Mobility ◽  
Structural Disorder ◽  
Oxide Thin Films ◽  
X Ray ◽  
Zinc Tin Oxide ◽  
The Impact ◽  
X Ray Absorption

Impacts of Sn precursors on solution-processed amorphous zinc–tin oxide films and their transistors

RSC Advances ◽  
2012 ◽  
Vol 2 (12) ◽  
pp. 5307 ◽  
Author(s):  
Yunlong Zhao ◽  
Guifang Dong ◽  
Lian Duan ◽  
Juan Qiao ◽  
Deqiang Zhang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Oxide Films ◽  
Solution Processed ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films
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