Self-Aligned Top-Gate Oxide Thin-Film Transistor Formed by Aluminum Reaction Method

2011 ◽  
Vol 50 (9R) ◽  
pp. 096502 ◽  
Author(s):  
Narihiro Morosawa ◽  
Yoshihiro Ohshima ◽  
Mitsuo Morooka ◽  
Toshiaki Arai ◽  
Tatsuya Sasaoka
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Oxide Thin Film ◽  
Reaction Method

Self-Aligned Top-Gate Oxide Thin-Film Transistor Formed by Aluminum Reaction Method

2011 ◽  
Vol 50 (9) ◽  
pp. 096502 ◽  
Author(s):  
Narihiro Morosawa ◽  
Yoshihiro Ohshima ◽  
Mitsuo Morooka ◽  
Toshiaki Arai ◽  
Tatsuya Sasaoka
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Oxide Thin Film ◽  
Reaction Method

P‐1.3: Novel Top Gate Oxide Thin Film Transistor: With Top Light Shielding Metal Structure

2021 ◽  
Vol 52 (S2) ◽  
pp. 692-692
Author(s):  
Macai Lu ◽  
Nian Liu ◽  
Lu Gao ◽  
Xueru Mei ◽  
Minggang Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Metal Structure ◽  
Gate Oxide ◽  
Oxide Thin Film

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film
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