Effect of Al concentration on Al-doped ZnO channels fabricated by atomic-layer deposition for top-gate oxide thin-film transistor applications

2014 ◽  
Vol 32 (4) ◽  
pp. 041202 ◽  
Author(s):  
Eom-Ji Kim ◽  
Jun-Yong Bak ◽  
Jeong-Seon Choi ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Doped Zno

Threshold voltage control of a thin-film transistor using an Al–Zn–O channel prepared using atomic layer deposition by controlling the Al dopant positions

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 92534-92540 ◽  
Author(s):  
Eom-Ji Kim ◽  
Won-Ho Lee ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Voltage Control ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Doped Zno ◽  
Active Channel

We proposed a methodology for controlling the threshold voltage by adjusting the position of the Al dopant layer within an Al-doped-ZnO active channel of a thin film transistor.

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

2018 ◽  
Vol 113 (11) ◽  
pp. 112102 ◽  
Author(s):  
Jongchan Lee ◽  
Jaehyun Moon ◽  
Jae-Eun Pi ◽  
Seong-Deok Ahn ◽  
Himchan Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Indium Oxide Thin Film

scholarly journals High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

2016 ◽  
Vol 4 (28) ◽  
pp. 6873-6880 ◽  
Author(s):  
H.-I. Yeom ◽  
J. B. Ko ◽  
G. Mun ◽  
S.-H. Ko Park
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Polycrystalline Phase ◽  
Indium Oxide Thin Film

A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.

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