Effect of Hydrogen Dilution on the Nanostructural and Electrooptical Characteristics of Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

2013 ◽  
Vol 52 (1S) ◽  
pp. 01AD06
Author(s):  
Hee-Jong Nam ◽  
Jong-Ick Son ◽  
Nam-Hee Cho
1997 ◽  
Vol 46 (10) ◽  
pp. 2015
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CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  

2007 ◽  
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M. Andrade ◽  
V. Sencadas ◽  
M. Ribeiro ◽  
S.A. Filonovich ◽  
...  

2008 ◽  
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P.Q. Luo ◽  
Z.B. Zhou ◽  
K.Y. Chan ◽  
D.Y. Tang ◽  
R.Q. Cui ◽  
...  

2011 ◽  
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A.M. Funde ◽  
V.S. Waman ◽  
M.M. Kamble ◽  
R.R. Hawaldar ◽  
...  

2007 ◽  
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Mahdi Farrokh Baroughi ◽  
Hassan G. El-Gohary ◽  
Cherry Y. Cheng ◽  
Siva Sivoththaman

AbstractHighly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).


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