Effect of O2Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics
2013 ◽
Vol 52
(4S)
◽
pp. 04CF11
◽
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
2019 ◽
Vol 19
(4)
◽
pp. 2179-2182
Keyword(s):
2019 ◽
Vol 31
(13)
◽
pp. 1005-1008
◽
Keyword(s):
2020 ◽
Vol 41
(6)
◽
pp. 856-859
◽