Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC07 ◽  
Author(s):  
Yeong-Hyeon Hwang ◽  
Won-Ju Cho ◽  
Yongtae Kim
Keyword(s):  
Tungsten Nitride ◽  
Tungsten Hexafluoride

Particle characterization of CVD tungsten metallization for 64 MBIT DRAM

1991 ◽  
Vol 49 ◽  
pp. 896-897
Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling
Keyword(s):  
Chemical Vapor ◽  
Device Performance ◽  
Particle Characterization ◽  
Particle Generation ◽  
Tungsten Hexafluoride ◽  
Homogeneous Particle ◽  
Multiple Levels ◽  
Circuit Density ◽  
Sources Of Contamination

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.

CVD preparation of alumina-supported tungsten nitride and its activity for thiophene hydrodesulfurization

1999 ◽  
Vol 50 (1) ◽  
pp. 29-37 ◽  
Author(s):  
Masatoshi Nagai ◽  
Toshiji Suda ◽  
Katsuhiko Oshikawa ◽  
Naoya Hirano ◽  
Shinzo Omi
Keyword(s):  
Tungsten Nitride ◽  
Thiophene Hydrodesulfurization

SIMS depth profiles study of WSi structures produced via the silicon reduction of tungsten hexafluoride

1993 ◽  
Vol 227 (2) ◽  
pp. 167-176 ◽  
Author(s):  
J.C. Dupuy ◽  
A. Essaadani ◽  
A. Sibai ◽  
C. Dubois ◽  
F.C. Dassapa ◽  
...  
Keyword(s):  
Depth Profiles ◽  
Tungsten Hexafluoride

scholarly journals Controllable synthesis of two-dimensional tungsten nitride nanosheets as electrocatalysts for oxygen reduction reaction

2018 ◽  
Vol 61 (12) ◽  
pp. 1567-1574 ◽  
Author(s):  
Jie Zhang ◽  
Jinwei Chen ◽  
Yan Luo ◽  
Yihan Chen ◽  
Maryam Kiani ◽  
...  
Keyword(s):  
Oxygen Reduction Reaction ◽  
Oxygen Reduction ◽  
Reduction Reaction ◽  
Tungsten Nitride ◽  
Two Dimensional ◽  
Controllable Synthesis

Atmospheric-Pressure Synthesis of 2D Nitrogen-Rich Tungsten Nitride

2018 ◽  
Vol 30 (51) ◽  
pp. 1805655 ◽  
Author(s):  
Huimin Yu ◽  
Xin Yang ◽  
Xu Xiao ◽  
Ming Chen ◽  
Qinghua Zhang ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Tungsten Nitride ◽  
Pressure Synthesis ◽  
Atmospheric Pressure Synthesis
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