Improvement of thermal stability of nickel silicide film using NH3plasma treatment

2014 ◽  
Vol 53 (9) ◽  
pp. 095506 ◽  
Author(s):  
Jingyu Park ◽  
Heeyoung Jeon ◽  
Hyunjung Kim ◽  
Woochool Jang ◽  
Jinho Kim ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Nickel Silicide ◽  
Silicide Film ◽  
Thermal Stability Of

The improvement of thermal stability of nickel silicide by adding a thin Zr interlayer

2006 ◽  
Vol 83 (2) ◽  
pp. 345-350 ◽  
Author(s):  
Wei Huang ◽  
Li-Chun Zhang ◽  
Yu-Zhi Gao ◽  
Han-Yan Jin
Keyword(s):  
Thermal Stability ◽  
Nickel Silicide ◽  
Thermal Stability Of

Thermal stability of nickel-cobalt multilayer silicide

2005 ◽  
Vol 891 ◽  
Author(s):  
Kil Jin Han ◽  
Yu Jung Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Depth Profile ◽  
Ternary Phase ◽  
Nickel Silicide ◽  
Composition Gradient ◽  
Cobalt Silicide ◽  
Nickel Cobalt ◽  
Thermal Stability Of ◽  
Xps Depth Profile

ABSTRACTIn this study, we have investigated the structure of nickel-cobalt silicide to understand its behavior at high temperature. Nickel-cobalt silicide was formed after two-step RTP at 500°C and 700°C respectively. We could observe by TEM that nickel-cobalt silicide consists of a structure which seems to be a Ni-Co-Si ternary phase. No nickel silicide phases and cobalt silicide phases were detected in nickel-cobalt silicide by XRD. From XPS depth profile, we could confirm that there is a cobalt composition gradient along the silicide.

Improvement of thermal stability of nickel silicide using N>inf/inf

2006 ◽  
Author(s):  
K. Kashihara ◽  
T. Yamaguchi ◽  
T. Okudaira ◽  
T. Tsutsumi ◽  
K. Maekawa ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Implantation ◽  
Nickel Silicide ◽  
Film Deposition ◽  
Nickel Film ◽  
Thermal Stability Of

scholarly journals Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs

2007 ◽  
Vol 8 (3) ◽  
pp. 110-114
Author(s):  
Ying-Ying Zhang ◽  
Won-Jae Lee ◽  
Zhun Zhong ◽  
Shi-Guang Li ◽  
Soon-Yen Jung ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Nickel Silicide ◽  
Stress Dependence ◽  
Thermal Stability Of

Stability Improvement of Nickel Silicide with Co Interlayer on Si, Polysilicon and SiGe

2001 ◽  
Vol 670 ◽  
Author(s):  
Jer-shen Maa ◽  
Douglas J. Tweet ◽  
Yoshi Ono ◽  
Lisa Stecker ◽  
Sheng Teng Hsu
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Sheet Resistance ◽  
Nickel Silicide ◽  
Formation Temperature ◽  
Facet Structure ◽  
High Temperature Anneal ◽  
Lower Temperature ◽  
Co Addition ◽  
Thermal Stability Of

ABSTRACTThermal stability of nickel silicide is improved by adding a thin Co interlayer at Ni/Si interface. After high temperature anneal, the low sheet resistance of silicide and the low junction leakage of the ultra-shallow junction show the lack of film degradation. The transformation to disilicide phase occurred at a lower temperature. At 850°C, interface shows the truncated facet structure extended 100° to 200° below silicide/Si interface. With Co addition, nickel silicide formed on polysilicon and on SiGe films also show improved thermal stability and low sheet resistance. Formation temperature of disilicide phase occurred at lower temperature in all these cases.

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