Characterization of a-plane InGaN light-emitting diodes with a SiNx interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition
2014 ◽
Vol 53
(11)
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pp. 111001
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2011 ◽
Vol 11
(4)
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pp. S90-S94
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2011 ◽
Vol 257
(18)
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pp. 8062-8066
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2007 ◽
Vol 46
(2)
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pp. 491-495
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Characterization of InAs‐GaSb type II superlattices grown by metal organic chemical vapor deposition
1995 ◽
Vol 18
(2)
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pp. 161-168
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2015 ◽
Vol 15
(5)
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pp. 2144-2150
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