High-speed and high-efficiency Si optical modulator with MOS junction, using solid-phase crystallization of polycrystalline silicon

A novel fabrication method of polycrystalline silicon by indium-induced crystallization (InIC) of amorphous silicon suboxide thin films with a stoichiometric coefficient of 0.5 (a-SiO0.5) is proposed. It was shown that the use of indium in the annealing process of a SiO0.5 allowed to decrease the crystallization temperature to 600°С which was significantly lower than the solid-phase crystallization temperature of the material - 850°С. As a result of the high-vacuum InIC of a-SiO0.5, the formation of free-standing micron-sized crystalline silicon particles took place.

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Numerical modeling of two-phase high speed jet with non-equilibrium solid phase crystallization

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/158/1/012070 ◽

2016 ◽

Vol 158 ◽

pp. 012070 ◽

Cited By ~ 1

Author(s):

A M Molchanov ◽

D S Yanyshev ◽

L V Bykov

Keyword(s):

Numerical Modeling ◽

High Speed ◽

Solid Phase ◽

Solid Phase Crystallization ◽

Two Phase ◽

Equilibrium Solid Phase ◽

Non Equilibrium

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High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(96)00091-9 ◽

1996 ◽

Vol 198-200 ◽

pp. 940-944 ◽

Cited By ~ 149

Author(s):

T. Matsuyama ◽

N. Terada ◽

T. Baba ◽

T. Sawada ◽

S. Tsuge ◽

...

Keyword(s):

Thin Film ◽

Polycrystalline Silicon ◽

Solid Phase ◽

Silicon Thin Film ◽

Solid Phase Crystallization ◽

High Quality ◽

Crystallization Method

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High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method

MRS Proceedings ◽

10.1557/proc-358-895 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 2

Author(s):

T. Baba ◽

T. Matsuyama ◽

T. Sawada ◽

T. Takahama ◽

K. Wakisaka ◽

...

Keyword(s):

Polycrystalline Silicon ◽

Solid Phase ◽

Silicon Film ◽

Columnar Structure ◽

High Electron ◽

Silicon Thin Film ◽

Solid Phase Crystallization ◽

Crystallization Method ◽

First Time ◽

Polycrystalline Silicon Film

ABSTRACTWe succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.

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Influence of the absorber doping for p-type polycrystalline silicon thin-film solar cells on glass prepared by electron beam evaporation and solid-phase crystallization

Journal of Applied Physics ◽

10.1063/1.3553886 ◽

2011 ◽

Vol 109 (5) ◽

pp. 054510 ◽

Cited By ~ 15

Author(s):

Zi Ouyang ◽

Oliver Kunz ◽

Alistair B. Sproul ◽

Sergey Varlamov

Keyword(s):

Thin Film ◽

Electron Beam ◽

Polycrystalline Silicon ◽

Solid Phase ◽

Electron Beam Evaporation ◽

Thin Film Solar Cells ◽

Silicon Thin Film ◽

Solid Phase Crystallization ◽

Absorber Doping ◽

P Type

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Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon

ASME 2009 3rd International Conference on Energy Sustainability, Volume 1 ◽

10.1115/es2009-90320 ◽

2009 ◽

Author(s):

Curtis Anderson ◽

Lin Cui ◽

Uwe Kortshagen

Keyword(s):

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Silicon Nanocrystals ◽

Solid Phase ◽

Amorphous Film ◽

Silicon Films ◽

Amorphous Films ◽

Solid Phase Crystallization ◽

Rapid Formation ◽

Polycrystalline Silicon Films

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.

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