Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach
2013 ◽
2002 ◽
Vol 49
(3)
◽
pp. 354-360
◽
2006 ◽
Vol 32
(1-2)
◽
pp. 566-568
◽
2019 ◽
Vol 58
(SC)
◽
pp. SCCB11
◽
2011 ◽
Vol 326
(1)
◽
pp. 62-64
◽
2004 ◽
Vol 43
(12)
◽
pp. 7939-7943
◽
2001 ◽