Novel Binary Alloy Gate Electrodes for Metal Gate MOS Devices

2002 ◽  
Author(s):  
Chih-Feng Huang ◽  
Bing-Yue Tsui
Keyword(s):  
Binary Alloy ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices

Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion

2001 ◽  
Vol 670 ◽  
Author(s):  
Igor Polishchuk ◽  
Pushkar Ranade ◽  
Tsu-Jae King ◽  
Chenming Hu
Keyword(s):  
Gate Dielectric ◽  
New Technology ◽  
Cmos Technology ◽  
Dielectric Surface ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Low Threshold ◽  
Work Functions ◽  
Electrical Reliability

ABSTRACTIn this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and p-MOSFET's. One of the gate electrodes is formed by metal interdiffusion so that no metal has to be etched away from the gate dielectric surface. Consequently, this process does not compromise the integrity and electrical reliability of the gate dielectric. This new technology is demonstrated for the Ti-Ni metal combination that produces gate electrodes with 3.9 eV and 5.3 eV work functions for n-MOS and p-MOS devices respectively.

Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devices

2006 ◽  
Vol 27 (3) ◽  
pp. 148-150 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Chen Wang ◽  
Tien-Ko Wang ◽  
Howard Chih-Hao Wang
Keyword(s):  
Thermal Stability ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Thermal Stability Of

scholarly journals Stability of Ru- and Ta-based metal gate electrodes in contact with dielectrics for Si-CMOS

2004 ◽  
Vol 241 (10) ◽  
pp. 2253-2267 ◽  
Author(s):  
Zhiqiang Chen ◽  
Veena Misra ◽  
Ryan P. Haggerty ◽  
Susanne Stemmer
Keyword(s):  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

Influence of Metal Gate Electrodes on Electrical Properties of Atomic-Layer-Deposited Al-Rich HfAlO/Ga2O3 MOSCAPs

2020 ◽  
Vol 67 (4) ◽  
pp. 1730-1736
Author(s):  
Hongpeng Zhang ◽  
Lei Yuan ◽  
Xiaoyan Tang ◽  
Jichao Hu ◽  
Jianwu Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

2007 ◽  
Vol 102 (7) ◽  
pp. 074511 ◽  
Author(s):  
J. K. Schaeffer ◽  
D. C. Gilmer ◽  
S. Samavedam ◽  
M. Raymond ◽  
A. Haggag ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
High Permittivity ◽  
Gate Electrodes
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