Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devices

2006 ◽  
Vol 27 (3) ◽  
pp. 148-150 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Chen Wang ◽  
Tien-Ko Wang ◽  
Howard Chih-Hao Wang
Keyword(s):  
Thermal Stability ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Thermal Stability Of

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

2002 ◽  
Vol 81 (22) ◽  
pp. 4192-4194 ◽  
Author(s):  
Tae-Ho Cha ◽  
Dae-Gyu Park ◽  
Tae-Kyun Kim ◽  
Se-Aug Jang ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal ◽  
Thermal Stability Of

Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks

2008 ◽  
Vol 52 (10) ◽  
pp. 1512-1517 ◽  
Author(s):  
Chung-Hao Fu ◽  
Po-Yen Chien ◽  
Kuei-Shu Chang-Liao ◽  
Tien-Ko Wang ◽  
Wen-Fa Wu
Keyword(s):  
Thermal Stability ◽  
Gate Stacks ◽  
Metal Gate ◽  
Mos Devices ◽  
Thermal Stability Of

Electrical Characteristics and Thermal Stability of $ \hbox{Hf}_{x}\hbox{Ta}_{y}\hbox{Si}_{z}\hbox{N}$ Metal Gate Electrode for Advanced MOS Devices

2008 ◽  
Vol 55 (11) ◽  
pp. 3259-3266
Author(s):  
Chang-Ta Yang ◽  
Kuei-Shu Chang-Liao ◽  
Hsin-Chun Chang ◽  
Chung-Hao Fu ◽  
Tien-Ko Wang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Characteristics ◽  
Gate Electrode ◽  
Metal Gate ◽  
Mos Devices ◽  
Thermal Stability Of

Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion

2001 ◽  
Vol 670 ◽  
Author(s):  
Igor Polishchuk ◽  
Pushkar Ranade ◽  
Tsu-Jae King ◽  
Chenming Hu
Keyword(s):  
Gate Dielectric ◽  
New Technology ◽  
Cmos Technology ◽  
Dielectric Surface ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Low Threshold ◽  
Work Functions ◽  
Electrical Reliability

ABSTRACTIn this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and p-MOSFET's. One of the gate electrodes is formed by metal interdiffusion so that no metal has to be etched away from the gate dielectric surface. Consequently, this process does not compromise the integrity and electrical reliability of the gate dielectric. This new technology is demonstrated for the Ti-Ni metal combination that produces gate electrodes with 3.9 eV and 5.3 eV work functions for n-MOS and p-MOS devices respectively.

scholarly journals Stability of Ru- and Ta-based metal gate electrodes in contact with dielectrics for Si-CMOS

2004 ◽  
Vol 241 (10) ◽  
pp. 2253-2267 ◽  
Author(s):  
Zhiqiang Chen ◽  
Veena Misra ◽  
Ryan P. Haggerty ◽  
Susanne Stemmer
Keyword(s):  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

Influence of Metal Gate Electrodes on Electrical Properties of Atomic-Layer-Deposited Al-Rich HfAlO/Ga2O3 MOSCAPs

2020 ◽  
Vol 67 (4) ◽  
pp. 1730-1736
Author(s):  
Hongpeng Zhang ◽  
Lei Yuan ◽  
Xiaoyan Tang ◽  
Jichao Hu ◽  
Jianwu Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes
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