On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

2007 ◽  
Vol 102 (7) ◽  
pp. 074511 ◽  
Author(s):  
J. K. Schaeffer ◽  
D. C. Gilmer ◽  
S. Samavedam ◽  
M. Raymond ◽  
A. Haggag ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
High Permittivity ◽  
Gate Electrodes

Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress

2006 ◽  
Vol 46 (1) ◽  
pp. 69-76 ◽  
Author(s):  
S. Chatterjee ◽  
Y. Kuo ◽  
J. Lu ◽  
J.-Y. Tewg ◽  
P. Majhi
Keyword(s):  
Gate Dielectrics ◽  
Constant Voltage ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
High K ◽  
Voltage Stress ◽  
Electrical Reliability

Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2259-2262 ◽  
Author(s):  
G. Lucovsky ◽  
J.L. Whitten
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
High K

Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

2005 ◽  
Vol 80 ◽  
pp. 1-6 ◽  
Author(s):  
Robert Chau ◽  
Justin Brask ◽  
Suman Datta ◽  
Gilbert Dewey ◽  
Mark Doczy ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme

2012 ◽  
Vol 187 ◽  
pp. 57-60 ◽  
Author(s):  
Guang Yaw Hwang ◽  
J.H. Liao ◽  
S.F. Tzou ◽  
Mark Lin ◽  
Autumn Yeh ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Gate Dielectrics ◽  
Semiconductor Industry ◽  
Wet Etching ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Current ◽  
Gate Electrodes ◽  
Polysilicon Gate ◽  
High K

Beginning at the 45nm node, the semiconductor industry is moving to high-k gate dielectrics and metal gate electrodes for CMOS logic devices [. Although different approaches of building these devices are being pursued, most of the industry has consolidated behind a gate last approach, in which the transistor is built around a dummy poly polysilicon gate, which is subsequently removed and replaced with a metal gate. Current approaches to removing the dummy poly gate include plasma-based dry processes and liquid-phase wet etching.

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

1999 ◽  
Vol 46 (7) ◽  
pp. 1537-1544 ◽  
Author(s):  
B. Cheng ◽  
M. Cao ◽  
R. Rao ◽  
A. Inani ◽  
P. Vande Voorde ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
The Impact

Impact of Galvanic Corrosion on Metal Gate Stacks

2009 ◽  
Vol 145-146 ◽  
pp. 215-218
Author(s):  
Masayuki Wada ◽  
Sylvain Garaud ◽  
I. Ferain ◽  
Nadine Collaert ◽  
Kenichi Sano ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Galvanic Corrosion ◽  
Gate Stacks ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Fermi Level Pinning ◽  
Gate Electrodes ◽  
High K ◽  
Work Functions

High-k gate dielectrics (HK), such as HfO2 or HfSiON, are being considered as the gate dielectric option for the 45nm node and beyond. In order to alleviate the Fermi-level pinning issue and to enhance the CET (Capacitive Effective Thickness) by generating the depletion layer in poly-Silicon gate, metal gate electrodes with proper work functions (WF) have to be used on the high-k dielectrics.

Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics

2003 ◽  
Vol 21 (1) ◽  
pp. 11 ◽  
Author(s):  
J. K. Schaeffer ◽  
S. B. Samavedam ◽  
D. C. Gilmer ◽  
V. Dhandapani ◽  
P. J. Tobin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

Evaluation of Hafnium Contamination on Wafer Surfaces after the Wet Cleaning Process

2012 ◽  
Vol 195 ◽  
pp. 265-268
Author(s):  
Suguru Saito ◽  
Yoshiya Hagimoto ◽  
Hayato Iwamoto
Keyword(s):  
High Performance ◽  
Gate Dielectrics ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
High K ◽  
Device Properties ◽  
Wafer Surfaces

High-k gate dielectrics and metal gate electrodes have become essential for emerging device technologies because they enable the continuous scaling down of devices while maintaining a high performance [. However, since they are composed of novel metallic elements that have never before been used in conventional processes, special care must be taken when handling these materials in the production line. In particular, cross-contamination that occurs due to transporting contamination via processed wafers can cause serious problems such as deterioration of device properties and yield loss [. The process of cleaning the backside and bevel of a wafer is now increasingly important for avoiding these problems. To date, there has been no detailed evaluation of contamination removal on various films performed for elements such as hafnium, which is one of the key elements in high-k/metal gate technologies. In this study, we evaluated hafnium contamination on three types of wafer surface after the cleaning process and investigated the cause of different residual amounts of hafnium contamination on the different wafers.

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