Impact of Ti/TiN (Glue/Barrier Layer) Formation on Ultra-thin Gate Oxide Reliability (HCI and NBTI) for Deep Sub-micron CMOS Transistors

2003 ◽  
Author(s):  
Chuan H. Liu ◽  
M.G. Chen ◽  
Y. R. Yang ◽  
Y. T. Loh
Keyword(s):  
Barrier Layer ◽  
Gate Oxide ◽  
Layer Formation ◽  
Cmos Transistors ◽  
Oxide Reliability ◽  
Thin Gate Oxide

Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 451-455 ◽  
Author(s):  
Kosuke Muraoka ◽  
Seiji Ishikawa ◽  
Hiroshi Sezaki ◽  
Tomonori Maeda ◽  
Shinichiro Kuroki
Keyword(s):  
Oxygen Concentration ◽  
Barrier Layer ◽  
Gate Oxide ◽  
Interface State ◽  
State Density ◽  
Conduction Band Edge ◽  
Low Oxygen ◽  
Barrier Layer Thickness ◽  
Thick Barrier ◽  
Thin Gate Oxide

A thickness of Ba-introduced gate oxide was controlled with the oxygen concentration and a barrier layer thickness at a post-deposition annealing. The oxidation rate becomes slower with the low oxygen concentration and the thick barrier layer, and the thin oxide of 12 nm was realized with O2 5% and 9 nm of the barrier layer. This Ba-introduced thin gate oxide resulted in the field effect mobility of 13 cm2/Vs and the interface state density of 2×1011 cm-2eV-1 at 0.25 eV below the conduction band edge of 4H-SiC.

Effect of charge transport through silicon nitride on thin gate oxide reliability

2002 ◽  
Vol 81 (23) ◽  
pp. 4464-4466 ◽  
Author(s):  
A. Cacciato ◽  
A. Scarpa ◽  
S. Evseev ◽  
M. Diekema
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Gate Oxide ◽  
Oxide Reliability ◽  
Thin Gate Oxide
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