Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain

Threshold voltage models for both buried channel and surface channel for the dual-channel strained Si/strained Si1-xGex/relaxd Si1-yGey(s-Si/s-SiGe/Si1-yGey) p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) are presented in this paper. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel (compressive strained SiGe) than in the surface channel, because the hole mobility in the buried channel is higher than that the surface channel. They offer a good accuracy as compared with the results of device simulator ISE.

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Hole mobility enhancement in uniaxially strained SiGe FINFETs: Analysis and prospects

69th Device Research Conference ◽

10.1109/drc.2011.5994513 ◽

2011 ◽

Cited By ~ 3

Author(s):

R. Bijesh ◽

I. Ok ◽

M. Baykan ◽

C. Hobbs ◽

P. Majhi ◽

...

Keyword(s):

Hole Mobility ◽

Strained Sige

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Hole Mobility Enhancement Observed in (110)-Oriented Strained Si

10.7567/ssdm.2019.ps-11-07 ◽

2019 ◽

Author(s):

K. Arimoto ◽

N. Utsuyama ◽

S. Mitsui ◽

K. Satoh ◽

T. Yamada ◽

...

Keyword(s):

Hole Mobility ◽

Strained Si

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Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.156-158.173 ◽

2009 ◽

Vol 156-158 ◽

pp. 173-180 ◽

Cited By ~ 1

Author(s):

Nicholas S. Bennett ◽

Chihak Ahn ◽

Nicholas E.B. Cowern ◽

Peter Pichler

Keyword(s):

Silicon Germanium ◽

Experimental Studies ◽

Close Correlation ◽

Theoretical Treatment ◽

Strained Si ◽

Early Theory ◽

Stress Effects ◽

Experimental Findings ◽

First Time ◽

Strained Sige

We present a review of both theoretical and experimental studies of stress effects on the solubility of dopants in silicon and silicon-germanium materials. Critical errors and limitations in early theory are discussed, and a recent treatment incorporating charge carrier induced lattice strain and correct statistics is presented. Considering all contributing effects, the strain compensation energy is the primary contribution to solubility enhancement in both silicon and silicon-germanium for dopants of technological interest. An exception is the case of low-solubility dopants, where a Fermi level contribution is also found. Explicit calculations for a range of dopant impurities in Si are presented that agree closely with experimental findings for As, Sb and B in strained Si. The theoretical treatment is also applied to account for stress effects in strained SiGe structures, which also show close correlation with recently derived experimental results for B-doped strained SiGe which are presented here for the first time.

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Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs

Journal of Semiconductors ◽

10.1088/1674-4926/30/10/104001 ◽

2009 ◽

Vol 30 (10) ◽

pp. 104001 ◽

Cited By ~ 4

Author(s):

Zhao Shuo ◽

Guo Lei ◽

Wang Jing ◽

Xu Jun ◽

Liu Zhihong

Keyword(s):

Hole Mobility ◽

Uniaxial Strain ◽

Strained Si

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An Analytical Hole Mobility Model for Biaxial Strained-Si-p-MOSFET

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2013.2810 ◽

2013 ◽

Vol 10 (5) ◽

pp. 1085-1090 ◽

Cited By ~ 1

Author(s):

Amit Chaudhry ◽

Sonu Sangwan

Keyword(s):

Hole Mobility ◽

Mobility Model ◽

Strained Si

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Anisotropic Hole Mobility in Strained Si1-xGex/(001)Si

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.181-182.388 ◽

2011 ◽

Vol 181-182 ◽

pp. 388-392

Author(s):

Jian Jun Song ◽

Shuai Lei ◽

He Ming Zhang ◽

Hui Yong Hu

Keyword(s):

Effective Mass ◽

Doping Concentration ◽

Hole Mobility ◽

Deformation Potential ◽

Rate Model ◽

Strained Si ◽

Scattering Rate ◽

Relaxation Time Approximation ◽

Crystal Orientations ◽

Kp Theory

Applying KP theory combined with deformation potential we obtained the valence band structure, and based on this result we calculated the orientation-dependent effective mass which is also called conductivity effective mass in strained Si1-xGex/(001)Si in this research, and furthermore ,we established the scattering rate model by using the density-of-states effective mass. On the basis of conductivity effective mass and scattering rate model, utilizing analytical method and relaxation time approximation we obtained the dependence of the value of hole mobility on stress and doping concentration in strained Si1-xGex/(001)Si along different crystal orientations. Compare to the unstrained Si, the anisotropy of hole mobility is more obvious in strained Si1-xGex/(001)Si, for example, It shows that under the same stress and doping concentration (Ni=1x1014cm-3, x=0.4), the value of hole mobility along [010] crystal orientation is visibly higher than other crystal orientations. This result can provide valuable references to the research of hole mobility of strained Si1-xGex materials and the design of devices.

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Strained Silicon On Insulator wafers made by the Smart Cut™ technology

MRS Proceedings ◽

10.1557/proc-809-b2.3 ◽

2004 ◽

Vol 809 ◽

Cited By ~ 1

Author(s):

B. Ghyselen ◽

Y. Bogumilowicz ◽

C. Aulnette ◽

A. Abbadie ◽

B. Osternaud ◽

...

Keyword(s):

Thin Films ◽

Hole Mobility ◽

Silicon On Insulator ◽

Strained Silicon ◽

Layer Transfer ◽

Strained Si ◽

Engineered Substrates

ABSTRACTStrained Silicon On Insulator wafers are today envisioned as a natural and powerfulenhancement to standard SOI and/or bulk-like strained Si layers. For MOSFETs applications, thisnew technology potentially combines enhanced devices scalability allowed by thin films andenhanced electron and hole mobility in strained silicon. This paper is intended to demonstrate byexperimental results how a layer transfer technique such as the Smart Cut™ technology can be usedto obtain good quality tensile Strained Silicon On insulator wafers. Detailed experiments andcharacterizations will be used to characterize these engineered substrates and show that they arecompatible with the applications.

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