Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications

2007 ◽  
Author(s):  
T.-Y. Wang ◽  
S. Maikap ◽  
P. J. Tzeng ◽  
D. Panda ◽  
L. S. Lee ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Nano Scale ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Volatile Memory ◽  
Memory Characteristics

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Memory Device ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Volatile Memory

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.

Synthesis and morphology of new asymmetric star polymers of poly[4-(9,9-dihexylfloren-2-yl)styrene]-block-poly(2-vinylpyridine) and their non-volatile memory device applications

Soft Matter ◽  
2011 ◽  
Vol 7 (18) ◽  
pp. 8440 ◽  
Author(s):  
Jung-Ching Hsu ◽  
Chaoxu Li ◽  
Kenji Sugiyama ◽  
Raffaele Mezzenga ◽  
Akira Hirao ◽  
...  
Keyword(s):  
Star Polymers ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Volatile Memory

Read Disturb in NROM Charge Trapping Non-Volatile Memory Device

2008 ◽  
Author(s):  
Natalie Shainsky ◽  
Ilan Bloom ◽  
Yosi Shacham ◽  
Boaz Eitan
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Volatile Memory

Optimization of MIS type Non-Volatile Memory Device with Al-Doped HfO2 as Charge Trapping Layer

2020 ◽  
Vol 9 (7) ◽  
pp. 075004
Author(s):  
Geonju Yoon ◽  
Taeyong Kim ◽  
Khushabu Agrawal ◽  
Jaemin Kim ◽  
Jinsu Park ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Volatile Memory

Partially bio-based triarylamine-containing polyimides: Synthesis, characterization and evaluation in non-volatile memory device applications

2021 ◽  
Vol 147 ◽  
pp. 110327
Author(s):  
Deepshikha Chatterjee ◽  
Uday A. Jadhav ◽  
Bharathkumar H. Javaregowda ◽  
Tukaram D. Dongale ◽  
Pramod S. Patil ◽  
...  
Keyword(s):  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Volatile Memory
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