Very high mobility 2D holes in strained Ge quantum well epilayers grown by Reduced Pressure Chemical Vapor Deposition

2010 ◽  
Author(s):  
M. Myronov ◽  
K. Sawano ◽  
D. R. Leadley ◽  
Y. Shiraki
2019 ◽  
Author(s):  
Y. Yamamoto ◽  
O. Skibitzki ◽  
M.A. Schubert ◽  
M. Scuderi ◽  
F. Reichmann ◽  
...  

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGK10
Author(s):  
Yuji Yamamoto ◽  
Oliver Skibitzki ◽  
Markus Andreas Schubert ◽  
Mario Scuderi ◽  
Felix Reichmann ◽  
...  

2010 ◽  
Vol 1245 ◽  
Author(s):  
Chun-Yuan Hsueh ◽  
Chieh-Hung Yang ◽  
Si-Chen Lee

AbstractThe hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).


2016 ◽  
Vol 602 ◽  
pp. 24-28
Author(s):  
Yuji Yamamoto ◽  
Naofumi Ueno ◽  
Masao Sakuraba ◽  
Junichi Murota ◽  
Andreas Mai ◽  
...  

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