High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition
Keyword(s):
Hot Wire
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AbstractThe hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).
2010 ◽
Vol 157
(12)
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pp. H1110
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Keyword(s):
2007 ◽
Vol 46
(1)
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pp. 56-59
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1993 ◽
Vol 11
(3)
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pp. 1176
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2005 ◽
Vol 483-485
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pp. 841-844
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2013 ◽
Vol 52
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pp. 110106
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