High Speed Lateral Crystallization of Amorphous Silicon Films on Glass Substrates by Micro-Thermal-Plasma-Jet Irradiation and Its Application to Thin Film Transistor Fabrication

2011 ◽  
Author(s):  
Y. Fujita ◽  
S. Hayashi ◽  
H. Murakami ◽  
S. Higashi
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thermal Plasma ◽  
High Speed ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Glass Substrates ◽  
Thermal Plasma Jet ◽  
Lateral Crystallization ◽  
Transistor Fabrication

Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB10 ◽  
Author(s):  
Seiichiro Higashi ◽  
Shohei Hayashi ◽  
Yasuo Hiroshige ◽  
Yusuke Nishida ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
High Performance ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Gate Insulator ◽  
Thermal Plasma Jet ◽  
Transistor Fabrication

Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CB10 ◽  
Author(s):  
Seiichiro Higashi ◽  
Shohei Hayashi ◽  
Yasuo Hiroshige ◽  
Yusuke Nishida ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
High Performance ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Gate Insulator ◽  
Thermal Plasma Jet ◽  
Transistor Fabrication

scholarly journals Crystallization of amorphous silicon thin film by using a thermal plasma jet

2009 ◽  
Vol 517 (14) ◽  
pp. 4070-4073
Author(s):  
Hyun Seok Lee ◽  
Sooseok Choi ◽  
Sung Woo Kim ◽  
Sang Hee Hong
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thermal Plasma ◽  
Plasma Jet ◽  
Silicon Thin Film ◽  
Thermal Plasma Jet

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films

2017 ◽  
Vol 56 (6S2) ◽  
pp. 06HE05
Author(s):  
Ryosuke Nakashima ◽  
Ryota Shin ◽  
Hiroaki Hanafusa ◽  
Seiichiro Higashi
Keyword(s):  
Amorphous Silicon ◽  
High Power ◽  
Thermal Plasma ◽  
Plasma Jet ◽  
Silicon Films ◽  
Thermal Plasma Jet
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