Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication

2010 ◽  
Vol 3 (6) ◽  
pp. 061401 ◽  
Author(s):  
Shohei Hayashi ◽  
Seiichiro Higashi ◽  
Hideki Murakami ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
High Speed ◽  
Arc Discharge ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
High Crystallinity ◽  
Transistor Fabrication ◽  
Dc Arc

Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB10 ◽  
Author(s):  
Seiichiro Higashi ◽  
Shohei Hayashi ◽  
Yasuo Hiroshige ◽  
Yusuke Nishida ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
High Performance ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Gate Insulator ◽  
Thermal Plasma Jet ◽  
Transistor Fabrication

Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CB10 ◽  
Author(s):  
Seiichiro Higashi ◽  
Shohei Hayashi ◽  
Yasuo Hiroshige ◽  
Yusuke Nishida ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
High Performance ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Gate Insulator ◽  
Thermal Plasma Jet ◽  
Transistor Fabrication

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jet

2017 ◽  
Vol 56 (4) ◽  
pp. 040304 ◽  
Author(s):  
Hiroaki Hanafusa ◽  
Ryosuke Ishimaru ◽  
Seiichiro Higashi
Keyword(s):  
High Temperature ◽  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
High Speed ◽  
Plasma Jet ◽  
Thermal Plasma Jet

Study of thin Film Formation From Silicon-Containing Precursors Produced by an RF Non-Thermal Plasma Jet at Atmospheric Pressure

2012 ◽  
Vol 52 (10) ◽  
pp. 872-880 ◽  
Author(s):  
J. Schäfer ◽  
R. Foest ◽  
F. Sigeneger ◽  
D. Loffhagen ◽  
K.-D. Weltmann ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Film Formation ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Non Thermal Plasma ◽  
Thin Film Formation
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