Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CB10 ◽  
Author(s):  
Seiichiro Higashi ◽  
Shohei Hayashi ◽  
Yasuo Hiroshige ◽  
Yusuke Nishida ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
High Performance ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Gate Insulator ◽  
Thermal Plasma Jet ◽  
Transistor Fabrication

Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB10 ◽  
Author(s):  
Seiichiro Higashi ◽  
Shohei Hayashi ◽  
Yasuo Hiroshige ◽  
Yusuke Nishida ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
High Performance ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Gate Insulator ◽  
Thermal Plasma Jet ◽  
Transistor Fabrication

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

Effects of N2 Plasma Treatment on SiO2 Gate Insulator in a-Si:H Thin Film Transistor

1994 ◽  
Vol 345 ◽  
Author(s):  
Sung Chul Kim ◽  
Sung Sig Bae ◽  
Eui Yeol Oh ◽  
Jeong Hyun Kim ◽  
Jong Wan Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
High Performance ◽  
Thin Film Transistor ◽  
Interface Layer ◽  
Experimental Results ◽  
Gate Insulator ◽  
Interface Region ◽  
Sequential Deposition ◽  
N2 Plasma

AbstractWe fabricated the high performance a-Si:H TFT using the N2 plasma treated APCVD SiO2 as a gate insulator. The effects of N2 plasma treatment on the APCVD SiO2 were investigated by XPS and SIMS measurements. And the formation of the oxynitride interface layer between a-Si:H and APCVD SiO2 was found in the a-Si:H TFT. From our experimental results, It may be concluded that most nitrogen atoms, which were incorporated by the exposure of SiO2 layer to N2 plasma, exist, not bonded to other atoms, near the surface of the SiO2 layer and during the sequential deposition of a-Si:H on the N2 plasma treated APCVD SiO2 layer Si-N bonds are formed, resulting in the oxynitride layer in the interface region. This explains the high performance a-Si:H TFT with the N2 plasma treated APCVD SiO2 gate insulator.

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